Panasonic MA3S132DG Specification Sheet

Switching Diodes
MA3S132DG, MA3S132EG
Silicon epitaxial planar type
For switching circuits
■ Features
• Short reverse recovery time t
• Small terminal capacitance C
• Two isolated elements contained in one package, allowing high-
density mounting
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Single
Forward current
Double
Single
Peak forward
current
Double
Single
Non-repetitive peak
*
forward surge current
Double
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance MA3S132DG
MA3S132EG
*
Reverse recovery time MA3S132DG
MA3S132EG
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
rr
t
= 25°C
a
Symbol Rating
V 80
R
V 80
RM
I 100
F
150
I 225
FM
340
I 500
FSM
750
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
F F
V I
R R
I V
R
C V
t
t I
rr F
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
■ Package
• Code
• Pin Name
Unit
■ Marking Symbol
V
V
mA
mA
■ Internal Connection
mA
°C
°C
Conditions
= 100 mA
= 100 µA
= 75 V
R
= 0 V, f = 1 MHz
R
= 10 mA, V = 6 V
R
= 0.1 I = 100 Ω
, R
R L
Input Pulse
t
t
r p
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKF00083AED
SSMini3-F3
MA3S132DG MA3S132EG
1: Cathode 1 1: Anode 1
2: Cathode 2 2: Anode 2
3: Anode 3: Cathode
MA3S132DG: MO
MA3S132EG: MU
3
1 2
D
Min Typ
80
Output Pulse
t
t
rr
I
F
t
= 0.1 I
I
rr R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
3
1 2
E
Max Unit
1.2 V
V
100 nA
15 pF
2
10 ns
3
1