Samsung SENS R60 Plus Service Manual page 64

4
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO'S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
D
C
B
KBC3_1.8V_EN#
40-C3 54-B3
19-C2
CHP3_ALINK_RST#
19-D4
20-A4
R86
0
R85
0
nostuff
P1.2V_PWRGD
nostuff
A
4
3
VDC P5.0V_AUX
R75 R76
715K 12.1
1% 1%
P1.8V_AUX
R552 12.1 1%
C590
1000nF
1nF
1nF C125
R78
C127
20K
G_DDR
1%
C126
1000nF
G_DDR
1%
R79
300K
150K
R77
1%
G_DDR
P3.3V MICOM_P3.3V P5.0V_ALW
R81 R83
R80
0 0
150K
3
1% D
nostuff
Q18
RHU002N06
G
1
R82 S 2
3
D
100K
1% C130
10nF
G
1
Q19
S 2
RHU002N06
54-C4
3 G_DDR G_DDR
D
R84 Q20
RHU002N06
G
1
10K
S
2
G_DDR
3
2
DDR2 Power
P5.0V P5.0V_AUX
D5
R63
U6 470K
SC486IMLTRT
nostuff
BAT54
11 7
VTTEN PGD
3
VDDQS
2 1
TON EN_PSV
6
FB
8
REF
R61 3.3
9 24
COMP BST
10
VTTS
5
VCCA
4 23
VSSA DH
21 R548 1K
ILIM
15 22 1%
VTT_1 LX
G_DDR
14
R549
VTT_2
P1.8V_AUX
13 19
VTTIN_1 DL
12 20
VTTIN_2 VDDP
C66 17 18
PGND_2 PGND_1
1000nF 16 25
PGND_3 THERM
C588
1000nF
G_DDR
SHORT7
C67 1nF 0
C68
1nF
nostuff
MEM1_REF
nostuff
R62
12.1
1%
1%
12.1
R64
C69
1000nF
G_DDR
2
R859
0
nostuff
R550 1K 1%
54-D3 52-D4 45-B1 40-C3
C589
2.2nF
G_DDR
C558 C559
100nF 100nF
25V 25V
5 6 7 8
D1 D2 D3 D4
100nF 25V
Q507
C587
G AP6680AGM
4 L505
S1 S2 S3 1.8uH
1 2 3
10K 1% 5 6 7 8
SIQ1045-1R8PF
D1 D2 D3 D4
Q10
EC3
AP6680AGM
R862 330uF
G 2.5V
4.7
AL
4
P5.0V_AUX
S1 S2 S3
1 2 3
C873
1nF
SHORT527 INSTPAR
G_DDR
1
D
AUX_PG
KBC3_SUSPWRON
VDC
C886 C887
10000nF 10000nF
25V 25V
P1.8V_AUX
C
EC5
330uF
nostuff
2.5V
AL
P0.9V
C65 C70
10000nF 10000nF
6.3V 6.3V
B
A
SAMSUNG
ELECTRONICS
PART NO.
1