External Memory Interface - LG KS10 Service Manual

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3. TECHNICAL BRIEF

3.11. External memory interface

The MSM6275 have two external memory interfaces with arbitration for the multi-layer AHB system
and memory controllers. The EBI1 bus is a high performance bus that supports a wide variety of
memories. EBI2 bus is targeted to be the interface for slow peripheral devices(i,.e., LCD) as well as
the NAND flash memory.
• EBI1 Features
- 16 bit static and dynamic memory interface
- 32 bit dynamic memory interface
- 24 bits of address for static memory devices which can support up to 32MBytes on each chip select
- Synchronous burst memories supported (burst NOR, burst PSRAM)
- Synchronous DRAM memories supported
- Byte addressable memory supporting 8 bit, 16 bit and 32 bit accesses
- Pseudo SRAM (PSRAM) memory support
• EBI2 Features
- Support for asynchronous FLASH and SRAM(16bit & 8bit).
- Interface support for byte addressable 16bit devices(UB_N & LB_N signals).
- 2Mbytes of memory per chip select.
- Support for 8 bit wide NAND flash.
- Support for parallel LCD interfaces, port mapped of memory mapped(16 & 8 bit)
• 512Mb NAND flash memory + 512Mb SDRAM (1die)
Device
FLASH
SDRAM
LGE Internal Use Only
Interface Spec
Part Name
TY90009800COGG
TY90009800COGG
Table. External memory interface for KS10
Maker
Read Access Time
Toshiba
35 ns/Bytes
Toshiba
107 ns/4Double Word 53 ns/4Double Word
Copyright © 2007 LG Electronics. Inc. All right reserved.
- 50 -
Write Access Time
50 ns/Bytes
Only for training and service purposes

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