Memory Subsystem; Dimm Placement Ddr2 400; Supported Dimm Module Types - Intel 6300ESB ICH User Manual

1.4.1

Memory Subsystem

The memory subsystem is designed to support Double Data Rate2(DDR2) Synchronous Dynamic
Random Access Memory (SDRAM) using the Intel(R) E7520 MCH. The MCH provides two
independent DDR channels, which support DDR2 400 DIMMs. The peak bandwidth of each
DDR2 branch channel is 3.2 Gbyte/s (8 bytes x 400 MT/s) with DDR2 400. The two DDR2
channels from the MCH operate in lock step; the effective overall peak bandwidth of the DDR2
memory subsystem is 6.4 Gbyte/s for DDR2 400.
Table 2 shows all DIMM technology supported by the CRB. Other DIMM types are not supported.
Table 2.

Supported DIMM Module Types

Technology
256 Mbit
512 Mbit
1 Gbit
1.4.2

DIMM Placement DDR2 400

Table 3.

DIMM Placement DDR2 400

DIMM Configuration
1 Dual Rank, 1 Single Rank
NOTES:
1. Populate DIMMs starting with the sockets farthest away from the MCH (DIMM slots A2 and B2).
2. When populating both channels, always place identical DIMMs in sockets that have the same position on
channel A and channel B (i.e., DIMM A2 should be identical to DIMM B2).
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Intel Xeon™ Processor, Intel
Organization
8 Mbytes x 8 x 4 banks
16 Mbytes x 4 x 4 banks
16 Mbytes x 8 x 4 banks
32 Mbytes x 4 x 4 banks
32 Mbytes x 8 x 4 banks
64 Mbytes x 4 x 4 banks
1 Single Rank
1 Dual Rank
2 Single Rank
2 Dual Rank
®
E7520 Chipset, Intel
DIMM1
Empty
Empty
Single Rank
Single Rank
Dual Rank
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6300ESB ICH Development Kit User's Manual
Product Overview
SDRAM Chips/DIMM
8
16
8
16
8
16
DIMM2
Single Rank
Dual Rank
Single Rank
Dual Rank
Dual Rank
11