MSI MS-7346 User Manual page 63

tRP
W hen the Memory Timings sets to [Manual], the field is adjustable. This item
controls the number of cycles for Row Address Strobe (RAS) to be allowed to
precharge. If insufficient time is allowed for the RAS to accumulate its charge
before DRAM refresh, refreshing may be incomplete and DRAM may fail to retain
data. This item applies only when synchronous DRAM is installed in the system.
tRAS
W hen the Memory Timings sets to [Manual], the field is adjustable. This setting
determines the time RAS takes to read from and write to a memory cell.
tRRD
W hen the Memory Timings sets to [Manual], the field is adjustable. Specifies
the active-to-active delay of different banks.
tRC
W hen the Memory Timings sets to [Manual], the field is adjustable. The row
cycle time determines the minimum number of clock cycles a memory row takes
to complete a full cycle, from row activation up to the precharging of the active
r ow.
tWR
W hen the Memory Timings sets to [Manual], the field is adjustable. Minimum
time interval between end of write data burst and the start of a precharge
command. Allows sense amplifiers to restore data to cells.
tWTR
W hen the Memory Timings sets to [Manual], the field is adjustable. Minimum
time interval between the end of write data burst and the start of a column-read
command. It allows I/O gating to overdrive sense amplifiers before read com-
mand starts.
tREF
W hen the Memory Timings sets to [Manual], the field is adjustable. Specifies
the refresh rate of the DIMM requiring the most frequent refresh.
Command Per Clock (CMD)
This field controls the SDRAM command rate. Selecting [1T] makes SDRAM
signal controller to run at 1T (T=clock cycles) rate. Selecting [2T] makes SDRAM
signal controller run at 2T rate.
Adjust PCI-E Frequency
This field allows you to select the PCIE frequency (in MHz).
CPU Voltage
This item allows you to overclock the CPU voltage.
M emory Voltage
Adjusting the memory voltage can increase the DDR speed.
BIOS Setup
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