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CC1312PSIP
SWRS293 – NOVEMBER 2023
8.6 Power Consumption - Radio Modes
When measured on the CC1312PSIP-EM reference design with T
otherwise noted.
Using boost mode (increasing VDDR up to 1.95 V), will increase system current by 15% (does not apply to TX +14 dBm
setting where this current is already included).
Relevant I
and I
currents are included in below numbers.
core
peri
PARAMETER
Radio receive current, 868 MHz
Radio transmit current
Regular PA
Radio transmit current
Boost mode, regular PA
Radio transmit current
High-power PA
Radio transmit current
High-power PA
8.7 Nonvolatile (Flash) Memory Characteristics
Over operating free-air temperature range and V
PARAMETER
Flash sector size
Supported flash erase cycles before failure, single-bank
Supported flash erase cycles before failure, single sector
Maximum number of write operations per row before sector
(3)
erase
Flash retention
Flash sector erase current
(4)
Flash sector erase time
Flash write current
(4)
Flash write time
(1)
A full bank erase is counted as a single erase cycle on each sector.
(2)
Up to 4 customer-designated sectors can be individually erased an additional 30k times beyond the baseline bank limitation of 30k
cycles
(3)
Each wordline is 2048 bits (or 256 bytes) wide. This limitation corresponds to sequential memory writes of 4 (3.1) bytes minimum
per write over a whole wordline. If additional writes to the same wordline are required, a sector erase is required once the maximum
number of write operations per row is reached.
(4)
This number is dependent on Flash aging and increases over time and erase cycles
(5)
Aborting flash during erase or program modes is not a safe operation.
8.8 Thermal Resistance Characteristics
R
Junction-to-ambient thermal resistance
θJA
R
Junction-to-case (top) thermal resistance
θJC(top)
R
Junction-to-board thermal resistance
θJB
ψ
Junction-to-top characterization parameter
JT
ψ
Junction-to-board characterization parameter
JB
(1)
For more information about traditional and new thermal metrics, see
14
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TEST CONDITIONS
0 dBm output power setting
868 MHz
+10 dBm output power setting
868 MHz
+14 dBm output power setting
868 MHz
Transmit (TX), +19 dBm output power setting
915 MHz, VDDS = 3.3 V
Transmit (TX), +20 dBm output power setting
915 MHz, VDDS = 3.3 V
= 3.0 V (unless otherwise noted)
DDS
(1) (5)
(2)
105 °C
Average delta current
Zero cycles
30k cycles
Average delta current, 4 bytes at a time
4 bytes at a time
(1)
THERMAL METRIC
Product Folder Links:
= 25 °C, V
= 3.6 V with DC/DC enabled unless
c
DDS
TEST CONDITIONS
Semiconductor and IC Package Thermal
Copyright © 2023 Texas Instruments Incorporated
CC1312PSIP
www.ti.com
TYP
UNIT
5.8
mA
9.4
mA
17.3
mA
28.7
mA
62
mA
86
mA
MIN
TYP
MAX
UNIT
8
KB
30
k Cycles
60
k Cycles
Write
83
Operations
Years at 105
11.4
°C
10.7
mA
10
ms
4000
ms
6.2
mA
21.6
µs
PACKAGE
MOT
UNIT
(SIP)
73 PINS
48.7
°C/W
12.4
°C/W
32.2
°C/W
0.40
°C/W
32.0
°C/W
Metrics.
(2)
(2)
(2)
(2)
(2)
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