ASROCK H510 Pro BTC+ User Manual page 41

H510 Pro BTC+
DRAM Timing Configuration
DRAM Frequency
If [Auto] is selected, the motherboard will detect the memory module(s) inserted
and assign the appropriate frequency automatically.
DRAM Gear Mode
Gear2 mode doubled the ratio in memory controller, and it is good for high
frequency.
Primary Timing
CAS# Latency (tCL)
The time between sending a column address to the memory and the beginning of the data
in response.
RAS# to CAS# Delay and Row Precharge (tRCDtRP)
RAS# to CAS# Delay : The number of clock cycles required between the opening of a row
of memory and accessing columns within it.
Row Precharge: The number of clock cycles required between the issuing of the precharge
command and opening the next row.
RAS# Active Time (tRAS)
The number of clock cycles required between a bank active command and issuing the
precharge command.
Command Rate (CR)
The delay between when a memory chip is selected and when the first active command can
be issued.
Secondary Timing
Write Recovery Time (tWR)
The amount of delay that must elapse after the completion of a valid write operation,
before an active bank can be precharged.
Refresh Cycle Time (tRFC)
The number of clocks from a Refresh command until the first Activate command to
the same rank.
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