Ddr2 Power - Samsung R60 NP-R60FY series Service Manual

4
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO'S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
D
C
MICOM_P3.3V
B
R70
0
R69
100K
1%
KBC3_1.8V_EN#
34-C3
3
D
Q12
R52 10K
RHU002N06
G
CHP3_ALINK_RST#
19-C2 19-D4
1
20-A4
S 2
G_DDR
A
4
3
P1.8V_AUX
R554 12.1 1%
C579
1000nF
6.3V
1nF
R50
C50
20K
1%
1%
300K
R49
G_DDR
R55
150K
1%
P3.3V P5.0V_ALW
R68
0 R56
150K
3
1% D
nostuff
Q13
RHU002N06
G
1
S 2
3
D
C52
10nF
G
1
Q14
S 2
RHU002N06
G_DDR G_DDR
3

DDR2 Power

VDC P5.0V_AUX P5.0V
R47 R48
715K 12.1
1% 1%
U7
SC486IMLTRT
11
VTTEN
3
VDDQS
2
TON
6
FB
8
REF
1nF 9
COMP
C48
10
VTTS
5
VCCA
4
C49 VSSA
1000nF
15
6.3V VTT_1
G_DDR
14
VTT_2
P1.8V_AUX
13
VTTIN_1
12
VTTIN_2
G_DDR
6.3V
17
1000nF PGND_2
16
C43 PGND_3
C44
1nF
nostuff
R51
12.1
1%
2
R791
0
nostuff
P5.0V_AUX
R552 1K
C578
2.2nF
D5
R53
470K
G_DDR
nostuff
BAT54
7
PGD
1
EN_PSV
5 6 7
D1 D2
R46 3.3 100nF 25V
24
BST
C40
G
23
4
DH
R30
21 1K S1 S2
ILIM
22 1% 1
LX
R29 5 6
10K 1%
D1 D2 D3
19
DL
20
VDDP
G
18
4
PGND_1
P5.0V_AUX
25 S1
THERM
1
C41
1000nF 6.3V
G_DDR
SHORT7 0
C45
1nF
nostuff
MEM1_REF
R54
12.1
1%
C51
1000nF
6.3V
G_DDR
2
1
D
AUX_PG
1%
KBC3_SUSPWRON
45-D4 39-B1 34-C3
VDC
C39 C38
C566 C565
100nF 100nF
10000nF 10000nF
25V 25V
C
8
D3 D4
Q11
AP6680AGM
P1.8V_AUX
L504
S3 2.2uH
2 3
7 8
SIQ1048-2R2
D4 EC505
330uF
Q506
R793 2.5V
AL
AP6680AGM 4.7
S2 S3
2 3
C792
1nF
For EMI enhancement
nostuff P0.9V
nostuff
C42 C47
10000nF 10000nF
6.3V 6.3V
B
SHORT524 INSTPAR
G_DDR
A
SAMSUNG
ELECTRONICS
PART NO.
1