Memory Topology - Samsung R60 NP-R60FY series Service Manual

4
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO'S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
MEM1_ACS0#
14-A? 17-C4
MEM1_ACS1#
14-A? 17-C4
D
MEM1_ACKE0
14-B? 17-C4
MEM1_ACKE1
14-A? 17-C4
MEM1_AODT0
14-A? 17-B4
MEM1_AODT1
14-A? 17-B4
MEM1_ABS0
14-D? 17-C4
MEM1_ABS1
14-D? 17-C4
MEM1_ABS2
14-C? 17-C4
MEM1_ACAS#
14-A? 17-C4
MEM1_ARAS#
14-A? 17-B4
MEM1_AWE#
14-A? 17-B4
C
MEM1_AMA(14:0)
14-D? 17-D4
0 R126
1 R129
2 R124
3 R137
R125
4
R134
5
6 R96
R98
7
8 R105
9 R102
R135
10
R97
11
B
12 R101
13 R123
14 R99
DE-COUPLING FOR SODIMM CHANNEL A
P1.8V_AUX
C94 C93 C96 C132 C130 C131 C95
100nF 100nF 100nF 100nF 100nF
10000nF 10000nF
10V 10V 10V 10V 10V
6.3V 6.3V
A
Should be placed nearby SODIMM
4
3
P0.9V P1.8V_AUX
R121 C149
56 100nF 10V
R133
56
C150
100nF
10V
R104 56 C106 100nF 10V
R100 56
C104
100nF
10V
R128 56 C147 100nF 10V
R136 56
C144
100nF
10V
R132 56 C148 100nF 10V
R127 56
C145
R103
56
100nF
10V
R131 56 C146 100nF 10V
R122 56
C105
R130 56
100nF
10V
P0.9V P1.8V_AUX
MEM1_BMA(14:0)
56 C138 100nF 10V
nostuff
56
C136 nostuff
56
nostuff
100nF
56 nostuff
10V
nostuff
nostuff
nostuff
nostuff
56 C137 100nF 10V
56
C134
56
100nF
56
10V
56 C99 100nF 10V
56
C97
56
100nF
56
10V
56 C98 100nF 10V
56
C135
56
100nF
10V
P0.9V
C133 C75 C152
10000nF
100nF 6.3V 10000nF
10V 6.3V
3
P0.9V
R595
56
MEM1_BCS0#
R119
14-A? 17-C2 56
MEM1_BCS1#
14-A? 17-C2
R92 56
MEM1_BCKE0
14-B? 17-C2 R581 56
MEM1_BCKE1
14-B? 17-C2
R594 56
MEM1_BODT0
R112 56
14-A? 17-B2
MEM1_BODT1
14-A? 17-B2
R118 56
MEM1_BBS0
14-D? 17-C2 R596 56
MEM1_BBS1
R94
14-D? 17-C2 56
MEM1_BBS2
14-D? 17-C2
R114 56
MEM1_BCAS#
R590 56
14-A? 17-C2
MEM1_BRAS#
14-A? 17-B2 R113 56
MEM1_BWE#
14-A? 17-B2
P0.9V
14-D? 17-D2
0 R589 56
1 R117 56
2 R593 56
3 R115 56
R592 56
4
R116 56
5
6 R580 56
R583 56
7
8 R91 56
9 R95 56
R120
10 56
R584
11 56
12 R93 56
13 R591 56
14 R582 56
DE-COUPLING FOR SODIMM CHANNEL B
P1.8V_AUX
C103 C155 C108 C156 C154 C153 C107
10000nF
100nF 100nF 100nF 100nF 100nF 100nF
6.3V
10V 10V 10V 10V 10V 10V
Should be placed nearby SODIMM
2
P1.8V_AUX

Memory Topology

C620
100nF 10V
C615
100nF (Dual channel for DDR-II )
10V
DDR-II ::
P1.8V_AUX
C616 100nF 10V
C613
100nF
10V
C617 100nF 10V
VDD18_MEM VDD_MEM
C612
100nF
10V
C619 100nF 10V
C611
100nF
10V
RS600M
C618 100nF
10V
C614
100nF
10V
P1.8V_AUX
C140 100nF 10V
nostuff
C100 nostuff
nostuff
100nF
nostuff
10V
nostuff
nostuff
nostuff
nostuff
C139 100nF 10V
C142
100nF
10V
C101 100nF 10V
C141
100nF
10V
C143 100nF 10V
C102
100nF
10V
P0.9V
C151
10000nF
6.3V
2
1
D
P0.9V
Address
CS
CKE
BS
P1.8V_AUX P3.3V
CAS/RAS/WE
DDR-II
DQ(63:0)
Standard
Connector
CLK
Memory Channel A
P1.8V_AUX P3.3V
CLK
DDR-II
C
Reverse
DQ(63:0)
Connector
Memory Channel B
Address
CS
CKE
P0.9V
BS
CAS/RAS/WE
B
A
SAMSUNG
ELECTRONICS
1