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Philips Semiconductors
Wide-band high-frequency amplifier
2.0
1.9
1.8
T
= 25
A
V
= 6V
CC
1.7
1.6
1.5
1.4
Z
= 75Ω
O
1.3
1.2
Z
= 50Ω
O
1.1
1.0
1
2
10
a. Input VSWR vs Frequency
ADDITIONAL READING ON SCATTERING
PARAMETERS
For more information regarding S-parameters, please refer to
High-Frequency Amplifiers by Ralph S. Carson of the University of
Missouri, Rolla, Copyright 1985; published by John Wiley & Sons,
Inc.
1992 Feb 24
o
C
.
4
6
8
2
2
4
6 8
3
10
10
FREQUENCY—MHz
Figure 21. Input/Output VSWR vs Frequency
+30
THIRD ORDER
INTERCEPT POINT
+20
1dB
COMPRESSION POINT
+10
FUNDAMENTAL
0
RESPONSE
-10
-20
-30
-40
-60
-50
-40
-30
2.0
1.9
1.8
T
amb
1.7
V
1.6
1.5
1.4
1.3
Z
= 75Ω
O
1.2
Z
= 50Ω
1.1
O
1.0
1
2
10
b. Output VSWR vs Frequency
"S-Parameter Techniques for Faster, More Accurate Network Design",
HP App Note 95-1, Richard W. Anderson, 1967, HP Journal.
"S-Parameter Design", HP App Note 154, 1972.
2ND ORDER
INTERCEPT
POINT
2ND ORDER
RESPONSE
3RD ORDER
RESPONSE
-20
-10
0
+10
+20
INPUT LEVEL dBm
Figure 22.
11
Product specification
NE/SA/SE5205A
o
= 25
C
= 6V
CC
4
6 8
2
2
4
6 8
10
FREQUENCY—MHz
+30
+40
3
10
SR00235
SR00236
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