MSI P55-CD45 series Technical Manual page 63

▶ Advance DRAM Configuraton
Press <Enter> to enter the sub-menu.
▶ CH1/ CH2 1T/2T Memory Tmng
Ths tem controls the SDRAM command rate. Select [1N] makes SDRAM sgnal
controller to run at 1N (N=clock cycles) rate. Selectng [2N] makes SDRAM sgnal
controller run at 2N rate.
▶ CH1/ CH2 CAS Latency (CL)
Ths controls the CAS latency, whch determnes the tmng delay (n clock cycles)
before SDRAM starts a read command after recevng t.
▶ CH1/ CH2 tRCD
When DRAM s refreshed, both rows and columns are addressed separately. Ths
setup tem allows you to determne the tmng of the transton from RAS (row ad-
dress strobe) to CAS (column address strobe). The less the clock cycles, the faster
the DRAM performance.
▶ CH1/ CH2 tRP
Ths settng controls the number of cycles for Row Address Strobe (RAS) to be
allowed to precharge. If nsufficent tme s allowed for the RAS to accumulate ts
charge before DRAM refresh, refresh may be ncomplete and DRAM may fal to
retan data. Ths tem apples only when synchronous DRAM s nstalled n the sys-
tem.
▶ CH1/ CH2 tRAS
Ths settng determnes the tme RAS takes to read from and wrte to memory cell.
▶ CH1/ CH2 tRFC
Ths settng determnes the tme RFC takes to read from and wrte to a memory
cell.
▶ CH1/ CH2 tWR
Mnmum tme nterval between end of wrte data burst and the start of a precharge
command. Allows sense amplfiers to restore data to cells.
▶ CH1/ CH2 tWTR
Mnmum tme nterval between the end of wrte data burst and the start of a col-
umn-read command. It allows I/O gatng to overdrve sense amplfiers before read
command starts.
▶ CH1/ CH2 tRRD
Specfies the actve-to-actve delay of dfferent banks.
▶ CH1/ CH2 tRTP
Tme nterval between a read and a precharge command.
▶ CH1/ CH2 tFAW
Ths tem s used to set the tFAW tmng.
▶ Current CH1/ CH2 tdrRdTRd/ tddRdTRd/ tsrRdTWr/ tdrRdTWr/ tddRdTWr/
tsrWrTRd/ tddWrTWr/ tsrRDTRd/ tsrWrTWr
These tem show the advanced DRAM tmngs.
MS-7586 MS-7586
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