MSI H67MA-E35 (B3) User Manual page 38

MS-7680 Manboard
▶ DRAM Rato
Ths settng controls the rato of memory frequency to enable the memory to run at df-
ferent frequency combnatons.
▶ Adjusted DRAM Frequency
It shows the adjusted DRAM frequency. Read-only.
▶ DRAM Tmng Mode
Select whether DRAM tmng s controlled by the SPD (Seral Presence Detect) EE-
PROM on the DRAM module. Settng to [Auto] enables DRAM tmngs and the followng
"Advanced DRAM Configuraton" sub-menu to be determned by BIOS based on the
configuratons on the SPD. Selectng [Lnk] or [Unlnk] allows users to configure the
DRAM tmngs and the followng related "Advanced DRAM Configuraton" sub-menu
manually.
▶ Advanced DRAM Configuraton
Press <Enter> to enter the sub-menu.
▶ Command Rate
Ths settng controls the DRAM command rate.
▶ tCL
Ths controls the CAS latency, whch determnes the tmng delay (n clock cycles)
before SDRAM starts a read command after recevng t.
▶ tRCD
When DRAM s refreshed, both rows and columns are addressed separately. Ths
setup tem allows you to determne the tmng of the transton from RAS (row ad-
dress strobe) to CAS (column address strobe). The less the clock cycles, the faster
the DRAM performance.
▶ tRP
Ths settng controls the number of cycles for Row Address Strobe (RAS) to be
allowed to precharge. If nsufficent tme s allowed for the RAS to accumulate ts
charge before DRAM refresh, refreshng may be ncomplete and DRAM may fal
to retan data. Ths tem apples only when synchronous DRAM s nstalled n the
system.
▶ tRAS
Ths settng determnes the tme RAS takes to read from and wrte to memory cell.
▶ tRFC
Ths settng determnes the tme RFC takes to read from and wrte to a memory
cell.
▶ tWR
Mnmum tme nterval between end of wrte data burst and the start of a precharge
command. Allows sense amplfiers to restore data to cells.
▶ tWTR
Mnmum tme nterval between the end of wrte data burst and the start of a col-
umn-read command. It allows I/O gatng to overdrve sense amplfiers before read
command starts.
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