LG U990 Service Manual page 31

3. TECHNICAL BRIEF
3.5.5 GSM PAM (U101:TQM7M5003)
The TQM7M5003 is an extremely small (7 x 7 mm), GSM/EDGE PAM for handset applications. This
module has been optimized for excellent EDGE efficiency and Pout in a Polar Loop environment at
EDGE class E2+ operation while maintaining high GSM/GPRS efficiency.
The small size and high performance is achieved with high-reliability 3
technology. With 50ߟ and output, no external matching or bias components are required.
The module incorporates two highly-integrated InGaP power amplifier die with a CMOS controller.
Each amplifier has three gain stages with on-die inter-stage matching implemented with a high Q
passives technology for optimal performance. The CMOS controller implements a fully integrated
power control within the module for GSM operations, and serves as the AM/AM path in EDGE
operations. This eliminates the need for any external couplers, power detectors, current sensing etc.,
to assure the output power level. The module has Tx enable and band select inputs. Module
construction is a low-profile overmolded landgrid array on laminate.
C136 8p
C138
L112
NA
15nH
C146 10p
C142
L113
4.7nH
0.75p
PQ
LGE Internal Use Only
14 1
GND6 DCS_PCS_IN
13 2
GND5 BS
12 3
VCC TX_EN
U101
11 TQM7M5003 4
GND4 VBATT
10 5
GND3 GND1
9 6
GSM_OUT VRAMP
8 7
GND2 GSM_IN
[Figure 1. 8] GSM PAM Schematic
rd
GSM_PA_BAND
GSM_PA_EN
+VPWR
C137 C135
33u
1u
FL101
EFCH897MTDB1
R117 2.2K
GSM_PA_RAMP
C143
68p
GSM_PA_BAND MODE
LOW GSM
DCS/PCS
HIGH
Copyright © 2007 LG Electronics. Inc. All right reserved.
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generation InGaP HBT
R111
DCS_PCS_TX
68
R112 R113
10 dB
91 91
3 2
R114
G2 G1
GSM_TX
IN
1
O1 G3
51
4 5 8 dB
R118 R119
120 120
Only for training and service purposes