LG -P940 Service Manual page 270

Hide thumbs Also See for LG-P940:
Table of Contents

Advertisement

Level
LocationNo.
R1305
R1306
R721
R722
6
Resistor,Chip
R802
R803
R901
R902
6
R702
Resistor,Chip
6
R411
Resistor,Chip
R517
6
Resistor,Chip
R518
FB302
6
FB303
Filter,Bead
FB304
Capacitor
6
C101
Ceramic,Chip
Inductor
6
C316
Multilayer,Chip
6
U401
IC,MCP,NAND
Capacitor
6
C328
Ceramic,Chip
6
X301
Crystal
Inductor
6
L128
Multilayer,Chip
6
U503
IC,Buffer
LGE Internal Use Only
12. EXPLODED VIEW & REPLACEMENT PART LIST
Description
PartNumber
ERHY0009511
ERHZ0000538
ERHY0040202
ERHY0018001
SFBH0008101
ECCH0000113
ELCH0003815
EUSY0425901
ECZH0000813
EAW61645401
ELCH0004703
EUSY0428301
Spec
MCR006YZPJ152 1.5KOHM 5% 1/20W 0603 R/TP
- ROHM.
MCR01MZP5F3303 330KOHM 1% 1/16W 1005
R/TP - ROHM.
RC0201FR-074R7L 4.7OHM 1% 1/20W 0603 R/TP
- YAGEO CORPORATION
RC0201JR-0720RL 20OHM 5% 1/20W 0603 R/TP -
YAGEO CORPORATION
BLM15AG601SN1D 600 ohm 1.0X0.5X0.5 25% 0.6
ohm 0.3A SMD R/TP 2P 0 MURATA
MANUFACTURING CO.,LTD.
MCH155A180J 18pF 5% 50V NP0 -55TO+125C
1005 R/TP - ROHM Semiconductor KOREA
CORPORATION
LQG15HS2N7S02D 2.7NH 0.3NH - 300mA
0.15OHM 6GHZ 8 SHIELD NONE 1.0X0.5X0.5MM
R/TP MURATA MANUFACTURING CO.,LTD.
H8BCS0QG0MMR-46M NAND/1G SDRAM/512M
0VTO0V 8.0x9.0x1.0 TR 130P NAND+DRAM BGA -
HYNIX SEMICONDUCTOR INC.
C1005C0G1H101JT 100pF 5% 50V NP0 -
55TO+125C 1005 R/TP - TDK KOREA
COOPERATION
Q22FA1280013000 37.4MHZ 10PPM 12F , SMD
R/TP EPSON TOYOCOM CORP
1005GC2T1N0SLF 1NH 0.3NH - 300mA 0.12OHM
10GHZ 8 SHIELD NONE 1.0X0.5X0.5MM R/TP
PILKOR ELECTRONICS LTD.
CDC3S04 1.65~1.95 999 999 999W 999W 33~68 4
WCSP R/TP 20P Quad Sine-wave Clock Buffer
TEXAS INSTRUMENTS KOREA LTD, HONGKONG
BRANCH.
- 70 -
Copyright © 011 LG Electronics. Inc. All right reserved.
Remark
Only for training and service purposes

Advertisement

Table of Contents
loading

Table of Contents