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Amtech TEMPRESS Manual

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Process Manual
®
Tempress
Systems, Inc.
Process manual
M220.383.02 January 2004

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  • Page 1 Process Manual ® Tempress Systems, Inc. Process manual M220.383.02 January 2004...

  • Page 3: Table Of Contents

    Process recipe setup procedure ..........3.1-1 Introduction............. 3.1-1 3.1.1 6 steps to a process recipe........3.1-1 3.1.2 Recommended command sequence ...... 3.1-2 3.1.3 Modifying the default Tempress recipe ....3.1-3 3.1.4 Process recipe startup and fine-tuning........3.2-1 Introduction............. 3.2-1 3.2.1 Prerequisites............3.2-1 3.2.2 Initial settings ............
  • Page 4 TABLE OF CONTENTS Further fine-tuning ..........3.2-2 3.2.4 Alarm handling with Branch and Abort commands ....3.3-1 Introduction............. 3.3-1 3.3.1 Do nothing with an alarms ........3.3-1 3.3.2 Handling alarms with the Branch command ... 3.3-1 3.3.3 Handling alarms with the Abort command ....3.3-2 3.3.4 Recipe example: LPCVD Nitride abort recipe..
  • Page 5 TABLE OF CONTENTS Silicondioxide (LTO SiO ) from SiH and O ......4.3-1 Basic configuration ..........4.3-1 4.3.1 Description.............. 4.3-1 4.3.2 Startup parameters for processing......4.3-2 4.3.3 Recommended cleaning interval ......4.3-2 4.3.4 Process result indication......... 4.3-3 4.3.5 Gas schematic example: LPCVD LTO....4.3-4 4.3.6 Recipe example: LPCVD silicondioxide from LTO SiH 4.3.7...
  • Page 6 TABLE OF CONTENTS Clear Alarms ................5.8-2 Required action............5.8-2 5.8.1 Touchscreen............5.8-2 5.8.2 TSC-2 ..............5.8-3 5.8.3 Write/Edit process recipe ............5.9-2 Touchscreen............5.9-2 5.9.1 TSC-2 ..............5.9-3 5.9.2 5.10 Edit graphical image ..........5.10-2 Touchscreen............5.10-2 5.10.1 TSC-2 ..............5.10-2 5.10.2 5.11 Logging process data ...........

  • Page 7: Preface

    Refer to the Touchscreen reference manual (M440.00) or the TSC-2 reference manual (M450.00) for a full description of all operating screens. For information about maintenance, refer to the maintenance manual (M230.00). The Tempress Horizontal Diffusion Furnaces are fully described in the reference manuals (M300.00). Tempress documentation set The complete Tempress documentation set includes: •...

  • Page 8: User Definition

    PREFACE User Definition It is strongly recommended that all users first read this manual before starting any procedure. To produce an accessible manual suiting on various responsibilities, Tempress defines the following users: Operator The operator is handling the process from loading until unloading of the wafers. Therefore the operator needs to select a recipe, put the wafers on the boat, fill in Lot ID, Start the process and monitor the progress using the Touchscreen and/or TSC-II.

  • Page 9: Notes, Cautions And Warnings

    PREFACE Notes, Cautions and Warnings Notes, Cautions and Warnings appear throughout this manual, where extra attention is required to a particular (safety) item. Three levels can be distinguished: NOTE Notes alert to pay attention to items or procedures of special importance. CAUTION Cautions alert for a potentially hazardous situation that may result in minor or moderate injuries.

  • Page 10: Contents Description

    Contents description This manual is divided into the following sections and appendices: Section 1 Introduction Provides an overview of the Tempress Systems Inc. Horizontal furnace, what it is and what it can do. Section 2 Safety Describes the safety components and functions. It describes all measures that are required to provide a safe way of working.

  • Page 11: Introduction

    INTRODUCTION 1.Introduction General The horizontal furnaces of Tempress Systems Inc. are developed according to the latest European directives for Machinery ( , Low Voltage ( ) and EMC 98/37/EC) 73/23/EC 89/336/EEC The Tempress Diffusion system is a modular horizontal furnace designed to process (silicon) wafers as part of the manufacturing technology of semiconductor, optical, MEMS and solar devices.

  • Page 12: Process Engineer Area Description

    The process engineer area is limited to the loadstation only. Figure 1-2 shows all relevant items. The Loadstation part of a Tempress System should be placed in the cleanroom. The Furnace and Gas cabinet can optionally be placed in the greyroom.

  • Page 13: Safety

    SAFETY 2.Safety This section contains a brief description of the safety features of a Tempress Horizontal Diffusion System for the process engineer. Process engineers must have a general knowledge of the technology involved in diffusion systems. They should understand safety practices outlined in this manual. Process engineers must have additional knowledge about chemistry and chemicals used in the customer specific process applications.

  • Page 14: Light Tower

    In case the EMO-switch is activated or a power failure occurs for more than 4 seconds, the power supply to the furnace will stop and also the light tower will be off. The tower signal PLC is programmed by Tempress Systems Inc. and is not adjustable by customers.
  • Page 15 SAFETY For a functional description of the light tower signals see table 1: Signal Mode Description Green Operational No warnings or messages Not operational Yellow BLINKING N pressure-switch No N gas flow detected Air pressure switch No Air flow detected Torch temp (750) The torch temperature has to exceed 750...

  • Page 16: Toxic Material

    SAFETY Toxic Material The process engineer, responsible for all process related activities, has to inform the operator about the hazards of the process. See section 4 Process description or safety manual for a complete description of all details. Safety measures Safety measures are indicated in the appropriate procedures.

  • Page 17: Process Setup And Acceptance

    Introduction 3.1.1 The Tempress Systems, Inc. process controller, DPC, has some unique features that enable the user to program any kind of process recipe in any way possible. A process recipe is made of steps, and within one step several commands can be programmed.

  • Page 18: Recommended Command Sequence

    PROCESS SETUP AND ACCEPTANCE 3.1.2.4 Step 4: Make detailed schematic The schematic can be split into different sections. Each section is going to represent one process step. The detailed schematic typically has the following shape: 3.1.2.5 Step 5: Convert schematic to block diagram The detailed schematic represents the individual steps that will be used in the process recipe.

  • Page 19: Modifying The Default Tempress Recipe

    Modifying the default Tempress recipe 3.1.4 The default Tempress process recipe is designed with Step 0 as Standby for all atmospheric processes. Obviously customers are free to alter the default recipe to fit their particular needs. For example, a 24 hr production environment typically uses step 0 as Load/unload step, not as a standby condition, because the machine is actually never in standby.

  • Page 20: Process Recipe Startup And Fine-Tuning

    PROCESS SETUP AND ACCEPTANCE Process recipe startup and fine-tuning Introduction 3.2.1 Process fine-tuning is required to reach the guaranteed process specifications and improve a current process. Many different methods lead to the same process result and any approach is valid as long as it satisfies the specifications.

  • Page 21: Further Fine-Tuning

    PROCESS SETUP AND ACCEPTANCE TS860x TS880x TS8110x 10.2 TS1280x 14.1 18.0 3.2.3.2 LPCVD process due to the low pressure refresh intervals are not an issue. Use the initial gasflows and pressure settings recommended in the appropriate process description. use a flat temperature Most LPCVD processes exhibit the depletion effect.

  • Page 22: Alarm Handling With Branch And Abort Commands

    Some types of alarm conditions are not important enough to stop a running process. These alarms still need to be fixed, though, and can be traced in long term history using the Tempress Systems, Inc. host computer system TSC-2 and short term history using the touchscreen alarm status screen.

  • Page 23: Handling Alarms With The Abort Command

    PROCESS SETUP AND ACCEPTANCE As the DPC has been designed to remember the last settings until they are changed, it is vital to verify the settings in the step one branches to. For example, in step 3 of the schematic above a Branch on Alarm y has been programmed. If this Alarm y occurs for more than 3 consecutive seconds then the DPC will branch to step 5.

  • Page 24: Recipe Example: Lpcvd Nitride Abort Recipe

    PROCESS SETUP AND ACCEPTANCE 3.3.4.2 Manual abort command at any time A manual Abort command can be issued at any time by an operator and should be used only if a potentially dangerous or damaging situation is likely to occur that can only be prevented by aborting the running process quickly.
  • Page 25 PROCESS SETUP AND ACCEPTANCE Message ABORTED !!! [16]. Sonalert alarm No Time: 000:15:00 (hr:min:sec) Variable Command: No Digital out N2 PURGE[9] = ON,N2PROCES[10] = ON,PROCESS[11] = ON,EVACDCS1[12] = OFF,EVACDCS2[13] = OFF,EVACNH3[14] = OFF,SOFTSTRT[15] = ON,MAINVAC[16] = ON Variable Command: No 20 02 EVACUATE Message ABORTED !!! [16].

  • Page 26: Process Acceptance Conditions

    PROCESS SETUP AND ACCEPTANCE Process acceptance conditions The process specifications of Amtech/Tempress Systems, Inc. can only be guaranteed if the conditions are satisfied as described in the following sections. Introduction 3.4.1 The Tempress process is characterised with either film thickness, sheet resistivity, added particle count, refractive index and/or dopant concentration, where applicable.
  • Page 27 Example: Figure 3-5 : Example of process result calculation 3.4.1.3 Equipment Standard Process recipes supplied by Amtech/Tempress Systems will be used for process acceptance runs. All measurement equipment should be supplied by the customer and be available to the Amtech/Tempress Systems Engineer.
  • Page 28 PROCESS SETUP AND ACCEPTANCE Thickness and refractive index measurements should be done with a Plasmos automated ellipsometer or comparable equipment. Sheet resistivity should be measured with an automated 4-point probe or comparable machine. Dopant concentration measurement should be supplied by the customer. Dopant variation will be characterised in absolute percentages and measured with SIMS or a comparable technique.

  • Page 29: Default Process Test Conditions

    M1-0298. Standard film thickness, sheet resistivity and/or dopant concentration as indicated in this section apply unless otherwise stated in the customer specific process specifications. 3.4.2.2 Tempress Systems, Inc. Atmospheric processes Atm-01 Anneal Test: temperature overshoot and stability Atm-02 Metalalloy anneal...
  • Page 30 PROCESS SETUP AND ACCEPTANCE base: bare Si wafer testmethod: ellipsometer Atm-06 Pyrogenic oxidation + liquid cleaning Equipment: Tempress Systems, Inc. external torch test thickness: 2000Å test temperature: 1000 time indication: 30 min base: bare Si wafer testmethod: ellipsometer Atm-07 reserved...
  • Page 31 PROCESS SETUP AND ACCEPTANCE 3.4.2.3 Tempress Systems, Inc. LPCVD processes LP-01 Ramped poly test thickness: 3000Å test temperature: 625 C (ramped) time indication: 30 min base: 1000Å dryoxide on Si wafer testmethod: ellipsometer LP-02 Flat poly test thickness: 3000Å test temperature: 610 time indication: 30 min base: 1000Å...
  • Page 32 PROCESS SETUP AND ACCEPTANCE LP-06 undoped TEOS test thickness: 2000Å test temperature: 725 time indication: 30 min base: bare Si wafer testmethod: ellipsometer LP-07 undoped LTO test thickness: 1500 Å test temperature: 425 time indication: 30 min base: bare Si wafer testmethod: ellipsometer LP-08 HTO test thickness: 900 Å...
  • Page 33 PROCESS SETUP AND ACCEPTANCE LP-15 BPSG TEOS test thickness: 3000 Å dopant concentration: 4%B, 4%P test temperature: 680 time indication: 30 min base: bare Si wafer testmethod: ellipsometer (thickness), SIMS (dopant) LP-16 PSG LTO test thickness: 2000 Å dopant concentration: 8%P test temperature: 425 time indication: 30 min base: bare Si wafer...
  • Page 34 PROCESS SETUP AND ACCEPTANCE 3.4-9 ROCESS ANUAL...

  • Page 35: Process Description

    Low pressure • Ramped Poly • Flat Poly • Nitride • TEOS • • Because of the flexibility of the Tempress Systems Inc. systems variations on these processes are available as well and will be manufactured on customer request. ROCESS ANUAL...

  • Page 36: Nitride From Nh And Sih Cl

    PROCESS DESCRIPTION Nitride from NH and SiH Basic configuration 4.1.1 , SiH (DCS) Temperature ramp at 700-800 Description 4.1.2 4.1.2.1 Purpose Nitride is used as an insulating and masking layer in electrical applications, and as an anti- reflecting coating in optical applications. 4.1.2.2 Chemicals , also known as DCS (DiChloroSilane), is a liquid at room temperature with a vapor pressure of 16 psi.

  • Page 37: Process Result Indication

    PROCESS DESCRIPTION 4.1.2.4 Typicalities Due to the low vapor pressure condensation may occur at any cold spot in the supply line. Condensation leads to droplets formation, which cause MFC blockage. Heat tracing the supply line strongly depends on the customer situation. A long distance between the bottle cabinet and tube necessitates heating.

  • Page 38: Recommended Cleaning Interval

    PROCESS DESCRIPTION TS630x 1000 TS660x 1000 TS680x 1000 TS6100x 1000 TS840x 1000 TS860x 1000 TS8100x 1000 TS1280x 1000 Recommended cleaning interval 4.1.5 Cleaning interval for the several components after cumulative deposition in microns on the wafers. Tube Cassettes SiC paddle Trap (upstream Oil and filter baffles...

  • Page 39: Gas Schematic Example: Lpcvd Siliconnitride

    PROCESS DESCRIPTION Gas schematic example: LPCVD siliconnitride 4.1.6 Water Coldtrap 10T/ATM Baratron To pump Vacuum testport 4.1-4 ROCESS ANUAL...

  • Page 40: Recipe Example: Lpcvd Siliconnitride From Sih

    PROCESS DESCRIPTION Recipe example: LPCVD siliconnitride from SiH and NH 4.1.7 00 START RECIPE Message LOAD/UNLOAD [4]. Sonalert alarm No Normal recipe 00 Zone1 800.0 °C Slope 10.00 °C/min Zone2 800.0 °C Slope 10.00 °C/min Zone3 800.0 °C Slope 10.00 °C/min , profile table A Boat to 2000.0 mm at 300.0 mm/min with oscillation speed of 0.0 mm/min.
  • Page 41 PROCESS DESCRIPTION Message EVACUATE 2 [9]. Sonalert alarm No Time: 000:05:00 (hr:min:sec) Variable Command: No Digital out N2 PURGE[9] = OFF,N2PROCES[10] = ON,PROCESS[11] = OFF,EVACDCS1[12] OFF,EVACDCS2[13] OFF,EVACNH3[14] OFF,SOFTSTRT[15] = ON,MAINVAC[16] = ON Variable Command: No Wait on digital in PRESS N2[1] = OFF,PRESSAIR[2] = OFF,doorclsd[3] = OFF,VACFAIL[4] ON,WATRCOOL[5] OFF,,TEMP...
  • Page 42 PROCESS DESCRIPTION 12 SET PRESSURE Message PURGE [12]. Sonalert alarm No Time: 000:02:00 (hr:min:sec) Variable Command: No Gas [PRESSURE [8]] at [250] [MTOR] Variable Command: Yes Alarm limit setting for Gas NH3 [4] at 10 % ( ± 50 SCCM) Variable Command: No Branch on gas/pressure NH3 [4] to step NH3 PURGE.

  • Page 43: Troubleshooting A Standard-Nitride Process

    PROCESS DESCRIPTION Branch on gas/pressure PRESSURE [8] to step EVAC CONTINUED. Sonalert alarm Yes 19 READY Message STANDBY [1]. Sonalert alarm No Digital out N2 PURGE[9] = ON,N2PROCES[10] = ON,PROCESS[11] = ON,EVACDCS1[12] OFF,EVACDCS2[13] OFF,EVACNH3[14] OFF,SOFTSTRT[15] = OFF,MAINVAC[16] = ON Variable Command: No Wait for operator 20 BACKFILL 1 Message BACKFILL [14].

  • Page 44: Nh 4 Cl Vapor Pressure Curve

    PROCESS DESCRIPTION • • The paddle is colder then the Insert temperature wafers and the tube. stabilization step in the recipe after ‘evacuate’ and/or ‘heat up’ step. Wafers are thick at the edges and • • Temperature Insert temperature thin at the center. homogeneous within wafer.
  • Page 45 PROCESS DESCRIPTION Figure 1: NH Cl vapor pressure 4.1-10 ROCESS ANUAL...

  • Page 46: Flat Polycrystalline Si From Sih

    PROCESS DESCRIPTION Flat Polycrystalline Si from SiH Basic configuration 4.2.1 Temperature flat C (fine grain) C (coarse grain) Description 4.2.2 4.2.2.1 Purpose A flat poly-Si process is used in situations with a strong demand for exactly dimensioned grain structures. As diffusion source it is required to have small grains (more grain boundaries to diffuse along) and as “bulk material”...

  • Page 47: Process Result Indication

    PROCESS DESCRIPTION Process result indication 4.2.3 A schematic view of the thickness profile along the load as function of normalized gasflows is given in the figure below. Door Pump A sccm A sccm Saddle profile B sccm C sccm D sccm E sccm F sccm The extra injector can also be removed to simplify processing.
  • Page 48 PROCESS DESCRIPTION Tube Cassettes SiC paddle Trap (upstream Oil and filter baffles tubing) change Poly 20/100 4.2-3 ROCESS ANUAL...

  • Page 49: Gas Schematic Example: Lpcvd Flat Poly

    PROCESS DESCRIPTION Gas schematic example: LPCVD Flat poly 4.2.6 Pump exhaust burn chamber Injector option 10T/ATM Baratron To pump Vacuum test port 4.2-4 ROCESS ANUAL...

  • Page 50: Recipe Example: Lpcvd Flat Poly-Silicon From Sih

    PROCESS DESCRIPTION Recipe example: LPCVD Flat poly-silicon from SiH 4.2.7 00 LOAD/UNLOAD Message LOAD/UNLOAD [4]. Sonalert alarm No Normal recipe 00 Zone1 610.0 °C Slope 10.00 °C/min Zone2 610.0 °C Slope 10.00 °C/min Zone3 610.0 °C Slope 10.00 °C/min , profile table A Boat to 2000.0 mm at 300.0 mm/min with oscillation speed of 0.0 mm/min.
  • Page 51 PROCESS DESCRIPTION Digital out N2 PURGE[9] = OFF,N2PROCES[10] = ON,PROCESS[11] = OFF,EVACSIL1[12] OFF,EVACSIL2[13] OFF,EVACSIL3[14] OFF,SOFTSTRT[15] = ON,MAINVAC[16] = ON Variable Command: No Wait on digital in PRESS N2[1] = OFF,PRESSAIR[2] = OFF,doorclsd[3] = OFF,VACFAIL[4] = ON,,,TEMP SCR[7] = OFF,EXCESS[8] = OFF Branch on wait alarm to step BACKFILL 1.
  • Page 52 PROCESS DESCRIPTION Alarm limit setting for Gas SIH4REAR [3] at 10 % ( ± 30.0 ) Variable Command: Branch on gas/pressure SIH4DOOR [2] to step EVACUATE. Sonalert alarm Yes Branch on gas/pressure SIH4REAR [3] to step EVACUATE. Sonalert alarm Yes 13 DEPOSITION Message DEPOSITION [13].

  • Page 53: Troubleshooting A Flat Poly Process

    PROCESS DESCRIPTION 19 BACKFILL 2 Message BACKFILL [14]. Sonalert alarm No Time: 000:10:00 (hr:min:sec) Variable Command: No Gas N2 [1] at 100.0 [slm] Variable Command: No Digital out N2 PURGE[9] = ON,N2PROCES[10] = ON,PROCESS[11] = ON,EVACSIL1[12] OFF,EVACSIL2[13] OFF,EVACSIL3[14] OFF,SOFTSTRT[15] = OFF,MAINVAC[16] = OFF Variable Command: No Troubleshooting a flat poly process 4.2.8 Problem:...

  • Page 54: Silicondioxide (Lto Sio ) From Sih And O

    PROCESS DESCRIPTION Silicondioxide (LTO SiO ) from SiH and O Basic configuration 4.3.1 LPCVD Low Temperature Oxide (LTO) , (PH and/or TMB optional) Injectors are used for SiH +TMB, and for O Flat temperature of 425 Quartz caged cassettes Description 4.3.2 4.3.2.1 Purpose Low Temperature Oxide (LTO) is mainly used as a passivation layer over devices, which...

  • Page 55: Startup Parameters For Processing

    PROCESS DESCRIPTION 4.3.2.4 Typicalities The cage design is critical for the cross wafer thickness uniformity, while the injector design and the position of the cage(s) compared to the position of the injector holes are critical for the cross load uniformity. If the cross wafer uniformity is above 5% a new cage design is required.

  • Page 56: Process Result Indication

    PROCESS DESCRIPTION LTO process results (1) cage design effect cage 1 cage 2 cage design Process result indication 4.3.5 LTO process results (2) injector design effect 12.0 10.0 injector 1 injector 2 injector design 4.3-3 ROCESS ANUAL...

  • Page 57: Gas Schematic Example: Lpcvd Lto

    PROCESS DESCRIPTION Gas schematic example: LPCVD LTO 4.3.6 10T/ATM Baratron To pump Vacuum test port 4.3-4 ROCESS ANUAL...

  • Page 58: Recipe Example: Lpcvd Silicondioxide From Lto Sih

    PROCESS DESCRIPTION Recipe example: LPCVD silicondioxide from LTO SiH and O 4.3.7 00 START RECIPE Message LOAD/UNLOAD [4]. Sonalert alarm No Normal recipe 00 Zone1 425.0 °C Slope 10.00 °C/min Zone2 425.0 °C Slope 10.00 °C/min Zone3 425.0 °C Slope 10.00 °C/min , profile table A Boat to 2000.0 mm at 300.0 mm/min with oscillation speed of 0.0 mm/min.
  • Page 59 PROCESS DESCRIPTION Digital out N2 PURGE[9] = OFF,N2PROCES[10] = ON,PROCESS[11] = OFF,EVACSIH4[12] = OFF,,,SOFTSTRT[15] = ON,MAINVAC[16] = ON Variable Command: No Wait on digital in PRESS N2[1] = OFF,PRESSAIR[2] = OFF,doorclsd[3] = OFF,VACFAIL[4] = ON,,,TEMP SCR[7] = OFF,EXCESS[8] = OFF Branch on wait alarm to step BACKFILL 1.
  • Page 60 PROCESS DESCRIPTION Alarm limit setting for Gas O2 [2] at 10 % ( ± 50 SCCM) Variable Command: No Branch on gas/pressure O2 [2] to step O2 PURGE. Sonalert alarm Yes 13 DEPOSITION Message DEPOSITION [13]. Sonalert alarm No Time: [000:30:00] (hr:min:sec) Variable Command: Yes Gas [SIH4 [3]] at [50.0] [SCCM] Variable Command: Yes Alarm limit setting for Gas SIH4 [3] at 10 % ( ±...

  • Page 61: Troubleshooting An Lto Process

    PROCESS DESCRIPTION Gas O2 [2] at 0 [SCCM] Variable Command: No Gas SIH4 [3] at 0.0 [SCCM] Variable Command: No Gas PRESSURE [8] at 0 [MTOR] Variable Command: No Digital out N2 PURGE[9] = ON,N2PROCES[10] = ON,PROCESS[11] = ON,EVACSIH4[12] = OFF,,,SOFTSTRT[15] = ON,MAINVAC[16] = OFF Variable Command: No Alarm on digital in PRESS N2[1] = ON,PRESSAIR[2] = ON,doorclsd[3] = ON,VACFAIL[4] = OFF,,,TEMP SCR[7] = ON,EXCESS[8] = ON...

  • Page 62: Operation Instructions

    Wafers and paddle are hot. • Allow the wafers to cool down. • Pick-up wafer carriers with a pick-up fork or automated loading tool. (Amtech Systems S300) • Remove the wafers from the wafer carriers, depending on the situation with (vacuum) tweezers or a wafer transfer system.

  • Page 63: Login Tsc-2

    OPERATION INSTRUCTIONS Login TSC-2 Changing login name may be required to couple process data to operator and process proceeding for logging data. TSC-2 5.2.1 Press “ID” to Login as screen until following screen appears: USER LOGIN Type the personal username and password Press “Login”...

  • Page 64: Selecting A New Process Recipe

    OPERATION INSTRUCTIONS Selecting a new process recipe A new process recipe needs to be selected so the new instructions can be executed. A new process recipe can only be selected if the current process recipe is in ‘Step 0‘. Touchscreen 5.3.1 1) return to the Main Menu by pressing ‘ESC’...
  • Page 65 OPERATION INSTRUCTIONS 5) press ‘Yes’ to confirm the question ‘Sure SELECT PROCESS recipe (Yes/No)?’ Note: selecting another process recipe is only possible if the current process recipe is in Step 0. 5.3-2 ROCESS ANUAL...
  • Page 66 OPERATION INSTRUCTIONS TSC-2 5.3.2 1) select the desired tube from the pull-down menu or from the ‘Overview’ screen. 2) select ‘Operations’ to access the operations screen. 3) Select the desired process recipe from the pull-down menu 4) Press ‘Yes’ to confirm the question ‘Are you sure to select another process recipe?’...

  • Page 67: Start/Continue A New Process Recipe

    OPERATION INSTRUCTIONS Start/Continue a new process recipe Two different situations require the ‘Start‘ command. The first situation is starting a newly selected process recipe so it starts running from Step 0. The second situation is starting a process recipe that has been stopped or is waiting for an ‘Operator‘...
  • Page 68 OPERATION INSTRUCTIONS TSC-2 5.4.2 1) select the desired tube from the pull-down menu or from the ‘Overview’ screen. select ‘Operations’ to access the operations screen. 3) press ‘Start’ to start the selected process recipe from ‘Step 0’ 4) press ‘Continue’ to start a process recipe that has been stopped or is waiting for an ‘Operator‘...

  • Page 69: Stop A Running Process Recipe

    OPERATION INSTRUCTIONS Stop a running process recipe Stopping a running process recipe may be required to temporarily stop the process recipe. When activated, the ‘Stop‘ command will stop the timer while all given commands are maintained. Touchscreen 5.5.1 1) return to the Main Menu by pressing ‘ESC’...
  • Page 70 OPERATION INSTRUCTIONS TSC-2 5.5.2 1) select the desired tube from the pull-down menu or from the ‘Overview’ screen. select ‘Operations’ to access the operations screen. 3) Press ‘Pause’ to stop the selected process recipe from the current step. 5.5-2 ROCESS ANUAL...

  • Page 71: Abort A Running Process Recipe

    OPERATION INSTRUCTIONS Abort a running process recipe A manual ‘Abort‘ instruction may be required if the operator foresees a dangerous situation or a continuous looped process recipe needs to be reset to Step 0 to allow selection of another process recipe. Touchscreen 5.6.1 1) return to the Main Menu by...
  • Page 72 OPERATION INSTRUCTIONS TSC-2 5.6.2 1) select the desired tube from the pull-down menu or from the ‘Overview’ screen. select ‘Operations’ to access the operations screen. 3) Press ‘Abort’ to abort the selected process recipe. Press ‘Yes’ to confirm the question ‘Sure to abort?’ 5.6-2 ROCESS ANUAL...

  • Page 73: Edit 'Variable Process Command

    OPERATION INSTRUCTIONS Edit ‘Variable Process Command’ ‘Variable Process Command‘ can be used to quickly modify specific process settings. Only those lines in the process recipe that have been assigned as ‘Variable Commands‘ will be presented in a list. From this list the desired process setting may be modified. ‘Variable Process Command‘...
  • Page 74 OPERATION INSTRUCTIONS commands stored’ appears. 7) Go to the Start/Continue a new process recipe procedure to start the process recipe if it is not running. 5.7-2 ROCESS ANUAL...
  • Page 75 OPERATION INSTRUCTIONS TSC-2 5.7.2 1) select the desired tube from the pull-down menu or from the ‘Overview’ screen. 2) select ‘Operations’ to access the operations screen. 3) Select ‘Edit Variable Commands’ to open the list with available Variable Commands 4) edit the desired process setting 1) highlight the desired process setting 2) press ‘Edit’...

  • Page 76: Clear Alarms

    OPERATION INSTRUCTIONS Clear Alarms Visible and audible Alarms signals are generated by the DPC and DTC. The visible alarms will be presented both on the touchscreen and the TSC-2 computer(s), the audible alarms are available on the touchscreen only. Two different audible alarm signals are available: •...
  • Page 77 OPERATION INSTRUCTIONS TSC-2 5.8.3 the overview screen gives an instant view of which tubes are in alarm in RED select the desired tube from the pull-down menu or from the ‘Overview’ screen select the ‘Alarm’ screen read the alarm message(s) take the appropriate action as described section...

  • Page 78: Write/Edit Process Recipe

    OPERATION INSTRUCTIONS Write/Edit process recipe A new process recipe needs to be written or edited so the desired instructions are executed in the required order. A new process recipe can always be generated. Editing an existing and RUNNING recipe is possible but poses considerable danger. It is therefore NOT allowed, except when using variable commands only.
  • Page 79 OPERATION INSTRUCTIONS TSC-2 5.9.2 1) return to the main overview screen 2) select ‘Recipes’ navigation bar to access the recipe screen 3) double click ‘Normal’ or ‘Abort’ in the mainfield 4) select ‘New’ to create a new or ‘Edit’ to edit a process recipe 5) for a new process recipe confirm the question: ‘Do...
  • Page 80 OPERATION INSTRUCTIONS 7) select a recipe to copy from or cancel 8) repeat step 3-7 for each process step and command. 5.9-4 ROCESS ANUAL...

  • Page 81: 5.10 Edit Graphical Image

    OPERATION INSTRUCTIONS 5.10 Edit graphical image To support the process recipe and to give actual progress information during the process run a graphical representation of the tube and its components can be added to the process certifications. The touchscreen allows predefined symbols and locations only, TSC-2 allows total freedom for the graphical operations screen layout.
  • Page 82 OPERATION INSTRUCTIONS 5) select SCREEN to find the desired screen number (max 4) 6) define the tube configuration (Left or Right) and the amount of heating zones first 7) select L for Door on Left, select R for Door on Right 8) select the number of heating zones by pressing the correct number (typically 3 or 5).
  • Page 83 OPERATION INSTRUCTIONS 16) select DIS to test the graphical system layout 17) select SET to activate the selected screen 5.10-4 ROCESS ANUAL...
  • Page 84 OPERATION INSTRUCTIONS TSC-2 5.10.2 1) return to the main overview screen 2) select ‘System’ in the navigation access system overview screen 3) select the desired tube from the pull-down menu or from the previous ‘Overview’ screen. 4) select ‘Operations Screen’ to access the operations screen editor.
  • Page 85 OPERATION INSTRUCTIONS 5) select New screen to create a new display 6) previously defined Operations Screens from the same or other tubes can be copied alternatively Note: It is recommended to use unique display names among tubes by including tube numbers 7) select the Object Library button to gain access to predefined objects...
  • Page 86 OPERATION INSTRUCTIONS 11) select the Open Dialog button to edit an existing screen 12) an example screen is presented next 13) connect object properties to DPC or DTC parameters by selecting the object and pressing the RMB. 14) Check the conditional box and the condition dialog appears 5.10-4 ROCESS...
  • Page 87 OPERATION INSTRUCTIONS 15) Select Digital condition ON/OFF change of a property, such as the valve fill color connected to a DO status 16) Select Data above value for AO minimum value change of a property, such as the MFC fill color connected to an AO status.

  • Page 88: Tsc-2

    OPERATION INSTRUCTIONS 5.11 Logging process data Logging data is automatically collected and can be used to optimize the process based on the process results. This logging function is only available in TSC-2, not on a touchscreen. TSC-2 (only) 5.11.1 1) Return to the main overview screen 2) Select ‘Data’...
  • Page 89 OPERATION INSTRUCTIONS 6) Select History Time to select logging data based on a Start and End time. Note: if the desired Start Time is later than the time already shown, the END Time must be extended first. Select History Lot to search all logging data for matching Lot IDs.
  • Page 90 OPERATION INSTRUCTIONS 9) Select History Actual for real time logging 10) Select the Graphical tab page for a graphical presentation of the logging data found by the search criteria above 11) Select the Data tab page for the raw data presentation of the logging data found by the search criteria above 5.11-4...
  • Page 91 OPERATION INSTRUCTIONS 12) Select the Alarm tab page for all alarm messages of the logging data found by the search criteria above 13) Use the Right Mouse Button (RMB) in the Graphical tab page gain access customization dialog. Titles and fonts can be added and/or modified here 5.11-5...

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