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5. Reserve the AC plug in the AC outlet and repeat each of the above
measure.
6. The potential at any point (TOUGH CURRENT) expressed as voltage U
and U
, does not exceed the following values:
2
For a. c.: U
= 35 V (peak) and U
1
For d. c.: U
= 1.0 V,
1
Note:
The limit value of U
= 0.35 V (peak) for a. c. and U
2
(peak) a. c. and 2.0 mA d. c.
The limit value U
= 35 V (peak) for a. c. correspond to the value 70 mA (peak) a. c. for frequencies
1
greater than 100 kHz.
7. In case a measurement is out of the limits specified, there is a
possibility of a shock hazard, and the equipment should be repaired
and rechecked before it is returned to the customer.
3. Prevention of Electro Static Discharge (ESD) to
Electrostatically Sensitive (ES) Devices
Some semiconductor (solid state) devices can be damaged easily by static electricity. Such
components commonly are called Electrostatically Sensitive (ES) Devices. Examples of typical ES
devices are integrated circuits and some field-effect transistors and semiconductor "chip" components.
The following techniques should be used to help reduce the incidence of component damage caused
by electro static discharge (ESD).
1. Immediately before handling any semiconductor component or
= 0.35 V (peak);
2
= 1.0 V for d. c. correspond to the values 0.7 mA
1
Figure 1
4
1
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