Extended InGaAs Biased Detector
Chapter 7 Specifications
All measurements are performed at 25 °C ambient temperature, unless stated
otherwise.
Detector
Active Area
Wavelength Range
Peak Wavelength
Peak Response
Shunt Resistance
Junction Capacitance
2,3,4
Rise Time
NEP (λ
)
p
Bias Voltage
5
Dark Current
Output Current
On/Off Switch
Battery Check Switch
Output
6
Package Size
PD Surface Depth
Weight
Accessories
Storage Temp
Operating Temp
Battery
Low Battery Voltage
V
(Hi-Z)
OUT
V
(50 Ω)
OUT
2
Measured with a specified bias voltage of 1.8 V.
3
Low battery voltage will result in slower rise times and decreased bandwidth.
4
For a 50 Ω Load
5
Measured with a 1 MΩ Load
6
Measured from the active area to the start of the threads on the housing body. The detector
active area surface is flush with the front of the housing body.
7
Assumes the battery voltage drops below 9.6 V. The reverse protection diode generates a 0.6
V drop.
Page 12
Electrical Specifications
2
7
-
-
λ
λ
p
( λ
)
p
R
sh
C
J
t
r
-
V
R
I
D
I
OUT
General
Momentary Pushbutton
(70.9 mm x 49.8 mm x 22.5 mm)
SM1RR Retainer Ring
A23, 12 V
Chapter 7: Specifications
InGaAs
Ø 0.5 mm (0.2 mm
900 to 2600 nm
2300 nm
1.3 A/W
50 kΩ (Typ.)
140 pF (Typ.)
17 ns (Typ.)
1.0 x 10
-12
W/√Hz (Typ.)
1.8 V
2 µA (Typ.)
20 µA (Max)
0 to 5 mA
Slide
BNC (DC Coupled)
2.79" x 1.96" x 0.89"
0.09" (2.2 mm)
0.10 kg
SM1T1 Coupler
-20 to 70 °C
10 to 50 °C
, 40 mAh
DC
(See Battery Check)
~9 V
~170 mV
TTN134284-D02
2
)
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