Si Biased Detector
Chapter 7 Specifications
All measurements performed at 25 °C ambient temperature, unless stated
otherwise.
Detector
Active Area
Wavelength Range
Peak Wavelength
Peak Response
Shunt Resistance
Junction Capacitance
Rise Time (632 nm)
NEP (λ
)
p
Bias Voltage
Dark Current
Output Current
On/Off Switch
Battery Check Switch
Output
Package Size
PD Surface Depth
Weight
Accessories
Storage Temp
Operating Temp
Battery
Low Battery Voltage
V
(Hi-Z)
OUT
V
(50 Ω)
OUT
2
Measured with specified bias voltage of 10.0 V
3
Low battery voltage will result in slower rise times and decreased bandwidth.
4
For a 50 Ω Load
5
Measured with a 1 MΩ Load
6
Measured from the active area to the start of the threads on the housing body. The detector
active area surface is flush with the front of the housing body.
7
Assumes the battery voltage drops below 9.6 V. The reverse protection diode generates a 0.6 V
drop.
Page 12
Electrical Specifications
2
2,3,4
5
6
7
-
-
3.6 x 3.6 mm (13 mm
λ
λ
p
( λ
)
p
R
sh
C
J
t
r
-
1.6 x 10
V
R
I
D
I
OUT
General
Momentary Pushbutton
BNC (DC Coupled)
2.79" x 1.96" x 0.89"
(70.9 mm x 49.8 mm x 22.5 mm)
SM1RR Retainer Ring
A23, 12 V
(See Battery Check)
Chapter 7: Specifications
Si
350 to 1100 nm
970 nm
0.65 A/W
1 GΩ (Typ.)
40 pF (Typ.)
14 ns (Typ.)
-14
W/√Hz (Typ.)
10 V
0.35 nA (Typ.)
6.0 nA (Max)
0 to 10 mA
Slide
0.09" (2.2 mm)
0.10 kg
SM1T1 Coupler
-20 to 70 °C
10 to 50 °C
, 40 mAh
DC
~9 V
~170 mV
TTN134189-D02
2
)
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