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Samsung 1H 2011 Selection Manual page 18

Lcd, memory and storage

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ddr SYncHronouS SrAM
Type
Density
Organization Part Number
512Kx36
K7D163674B
16Mb
1Mx18
K7D161874B
DDR
256Kx36
K7D803671B
8Mb
512Kx18
K7D801871B
K7I641882M
4Mx18
K7I641884M
K7J641882M
72Mb
K7I643682M
2Mx36
K7I643684M
K7J643682M
K7I321882C
2Mx18
K7I321884C
K7J321882C
DDR II
36Mb
CIo/sIo
K7I323682C
1Mx36
K7I323684C
K7J323682C
K7I161882B
1Mx18
K7I161884B
K7J161882B
18Mb
K7J163682B
512Kx36
K7I163682B
K7I163684B
K7K3218t2C
2Mx18
K7K3218U2C
36Mb
K7K3236t2C
1Mx36
DDR II+
K7K3236U2C
CIo
K7K1618t2C
1Mx18
18Mb
K7K1618U2C
512Kx36
K7K1636t2C
Notes:
2B = Burst of 2
For DDR II CIo/sIo: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit
4B = Burst of 4
For DDR II+ CIo: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz
sIo = separate I/o
CIo = Common I/o
18
DDR I / II / II+
Package
Vdd (V)
Access Time
tCD (ns)
153-BGA
1.8~2.5
2.3
153-BGA
1.8~2.5
2.3
153-BGA
2.5
1.7/1.9/2.1
153-BGA
2.5
1.7/1.9/2.1
165-FBGA
1.8
0.45,0.45,0.45,0.50
165-FBGA
1.8
0.45,0.45,0.45,0.50
165-FBGA
1.8
0.45,0.45,0.45,0.50
165-FBGA
1.8
0.45,0.45,0.45,0.50
165-FBGA
1.8
0.45,0.45,0.45,0.50
165-FBGA
1.8
0.45,0.45,0.45,0.50
165-FBGA
1.8
0.45
165-FBGA
1.8
0.45
165-FBGA
1.8
0.45
165-FBGA
1.8
0.45
165-FBGA
1.8
0.45
165-FBGA
1.8
0.45
165-FBGA
1.8
0.45,0.45,0.45,0.50
165-FBGA
1.8
0.45,0.45,0.45,0.50
165-FBGA
1.8
0.45,0.45,0.45,0.50
165-FBGA
1.8
0.45,0.45,0.45,0.50
165-FBGA
1.8
0.45,0.45,0.45,0.50
165-FBGA
1.8
0.45,0.45,0.45,0.50
165-FBGA
1.8
0.45
165-FBGA
1.8
0.45
165-FBGA
1.8
0.45
165-FBGA
1.8
0.45
165-FBGA
1.8
0.45
165-FBGA
1.8
0.45
165-FBGA
1.8
0.45
1H 2011
Cycle Time
I/O Voltage
Production
(V)
Status
330, 300
1.5~1.9
Mass Production
330, 300
1.5~1.9
Mass Production
333, 330, 250
1.5 (Max 2.0) Not for new designs
333, 330, 250
1.5 (Max 2.0) Not for new designs
300,250,200,167
1.5,1.8
Mass Production
300,250,200,167
1.5,1.8
Mass Production
300,250,200,167
1.5,1.8
Mass Production
300,250,200,167
1.5,1.8
Mass Production
300,250,200,167
1.5,1.8
Mass Production
300,250,200,167
1.5,1.8
Mass Production
300,250
1.5,1.8
Mass Production
300,250
1.5,1.8
Mass Production
300,250
1.5,1.8
Mass Production
300,250
1.5,1.8
Mass Production
300,250
1.5,1.8
Mass Production
300,250
1.5,1.8
Mass Production
300,250,200,167
1.5,1.8
Mass Production
250,200,167
1.5,1.8
Mass Production
300,250,200,167
1.5,1.8
Mass Production
300,250,200,167
1.5,1.8
Mass Production
300,250,200,167
1.5,1.8
Mass Production
250,200,167
1.5,1.8
Mass Production
400
1.5
Mass Production
400
2.5
Mass Production
400, 333
1.5
Mass Production
400, 334
2.5
Mass Production
400, 333
1.5
Mass Production
400, 334
2.5
Mass Production
400, 333
1.5
Mass Production
samsung.com/semi/sram
Comments
CIo-2B
CIo-4B
sIo-2B
CIo-2B
CIo-4B
sIo-2B
CIo-2B
CIo-4B
sIo-2B
CIo-2B
CIo-4B
sIo-2B
CIo-2B
CIo-4B
sIo-2B
sIo-2B
CIo-2B
CIo-4B
DDRII + CIo-2B,
2 clocks latancy
DDRII + CIo-2B,
2.5 clocks latancy
DDRII + CIo-2B,
2 clocks latancy
DDRII + CIo-2B,
2.5clocks latancy
DDRII + CIo-2B,
2 clocks latancy
DDRII + CIo-2B,
2.5clocks latancy
DDRII + CIo-2B,
2 clocks latancy

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