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MoBile drAM coMPonentS
Type
Density
Organization
32Mx16
MsDR
512Mb
16Mx32
16Mx16
256Mb
8Mx32
32Mx16
512Mb
16Mx32
MDDR
1Gb
32Mx32
2Gb
64Mx32
x32 (2Cs, 2CKe)
4Gb
x32 (2Cs, 2CKe)
1Gb
1CH x32
1CH x32
2Gb
2CH x32/ch
1CH x32
1CH x32
4Gb
1CH x32
LPDDR2
2CH x32/ch
2CH x32/ch
1CH x32
2CH x32/ch
8Gb
2CH x32/ch
2CH x32/ch
16Gb
2CH x32/ch
(1) Speed:
Notes:
Mobile-sDR
Mobile-DDR
60: 166MHz, CL3
D8: 200MHz, CL3
75: 133MHz, CL3
C6: 166MHz, CL3
GrAPHicS drAM coMPonentS
Type
Density
Organization
2Gb
64Mx32
GDDR5
1Gb
32Mx32
1Gb
32Mx32
GDDR3
512Mb
16Mx32
2Gb
128Mx16
gDDR3
1Gb
64Mx16
gDDR2
1Gb
64Mx16
Package
Notes:
H: FBGA (Halogen Free & Lead Free)
B: FBGA (Halogen Free & Lead Free)
samsung.com/semi/dram
Part Number
K4M51163PI-BG(1)
K4M51323PI-HG(1)
K4X56163PN-FG(1)
K4X56323PN-8G(1)
K4X51163PI-FG(1)
K4X51323PI-8G(1)
K4X1G323PF-8G(1)
K4X2G323PC-8G(1)
K4X4G303PC-AG(1)
K4X4G303PC-7G(1)
K4P1G324ee-AG(1)
K4P2G324eC-AG(1)
K3Pe3e300M-XG(1)
K4P4G304eC-AG(1)
K4P4G154eC-FG(1)
K4P4G324eB-FG(1)
K3Pe4e400M-XG(1)
K3Pe4e400A-XG(1)
K4P8G304eC-FC(1)
K3Pe8e800M-XG(1)
K3Pe7e700M-XG(1)
K3Pe7e700A-XG(1)
K3Pe0e00M-XG(1)
LPDDR2
C1: 800Mbps
Part Number
Package
K4G20325FC-HC(1)
170-FBGA
K4G20325FC-HC04
170-FBGA
K4G20325FC-HC03
170-FBGA
K4G10325Fe-HC(1)
170-FBGA
K4G10325Fe-HC04
170-FBGA
K4J10324Ke-HC(1)
136-FBGA
K4J52324KI-HC(1)
136-FBGA
K4W2G1646C-HC(1)
96 FBGA
K4W1G1646G-BC(1)
96 FBGA
K4N1G164Qe-HC(1)
84-FBGA
(1) Speeds (clock cycle - speed bin)
03: 0.3ns (3000MHz)
04: 0.4ns (2500MHz)
05: 0.5ns (2000MHz)
1H 2011
Package
54-FBGA
90-FBGA
60-FBGA
90-FBGA
60-FBGA
90-FBGA
90-FBGA
90-FBGA
168-FBGA, 12x12 PoP, DDP
240-FBGA, 14x14 PoP, DDP
168-FBGA, 12x12 PoP
168-FBGA, 12x12 PoP
216-FBGA, 12x12 PoP
168-FBGA, 12x12 PoP, DDP, 64Mx32*2
134-FBGA, 11x11.5 PoP, DDP, 128x16*2
168-FBGA, 12x12 PoP, MoNo, 128Mx32
216-FBGA, 12x12 PoP, QDP, 64Mx32*2
240-FBGA, 14x14 PoP, QDP, 64Mx32*2
134-FBGA, 11x11.5 PoP, QDP, 128x16*4
216-FBGA, 12x12 PoP, QDP, 64Mx32*4
216-FBGA, 12x12 PoP, DDP, 128Mx32*2
240-FBGA, 14x14 PoP, DDP, 128Mx32*2
216-FBGA, 12x12 PoP, QDP, 128Mx32*4
All products offered at extended, Low, i-tCsR & PAsR & Ds (temp, Power)
VDD/VDDQ
1.5/1.5V
1.35V/1.35V
1.35V/1.35V
1.5/1.5V
1.35V/1.35V
1.8V/1.8V
1.8/1.8V
1.5V/1.5V
1.5V/1.5V
1.8/1.8V
5C: 0.555 (1800MHz)
08: 0.83ns (1200MHz)
1A: 1ns (1000MHz GDDR3)
Mobile & Graphics DRAM Components
Power
Production
1.8V
Now
1.8V
Now
1.8V
Now
1.8V
Now
1.8V
Now
1.8V
Now
1.8V
Now
1.8V
Now
1.8V
Now
1.8V
Now
1.2V
Now
1.2V
Now
1.2V
Now
1.2V
Now
1.2V
Now
1.2V
Now
1.2V
Now
1.2V
Now
1.2V
Now
1.2V
Now
1.2V
Now
1.2V
Now
1.2V
Now
Speed Bin (MHz)
2000/2500/3000
1800
2000
2000/2500
1800
700/800/1000/1200
700/800/1000
800/933/1066
800/933/1066
400/500
1A: 1ns (1066MHz gDDR3)
14: 1.429ns (700MHz)
11: 1.1ns (933MHz)
20: 2.0ns (500MHz)
12: 1.25ns (800MHz)
25: 2.5ns (400MHz)
9
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