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Specifications
2 Specifications
2.1 Inputs
Preamplification channels: 1
up to ± 4000 volts (SHV connector)
± 4000 volts (SHV connector)
Test input 50 ohms terminated fort tail pulser
2.2 Outputs
Decay time constant: 140 µs (150 µs, 50 µs, 50 µs resp.)
Unsaturated output swing: -3 to +3 volts
Output offset: +0.2 to -0.2 volts
Output impedance: 50 ohms
2.3 Performance
Equivalent noise charge (ENC)*: ( see table 1, CSPA10)
ENC RMS: 200 electrons, 0.03 femtoCoul. (CSPA10)
Equivalent noise in silicon: 1.7 keV (FWHM)
Equivalent noise in CdZnTe: 2.4 keV (FWHM)
ENC slope: 4 electrons RMS /pF
Gain: see table 1
Rise time**: 7 ns ( see table 2 page 2, CSPA10 )
Maximum charge detectable per event: (see table 1)
Operating temperature: -40 to +85ºC
•
Measured with input unconnected, using Gaussian shaping amplifier with time constant =1 s. With a detector attached to the
input, noise from the detector capacitance, leakage current, and dielectric losses will add to this figure.
** Pulse rise time (defined as the time to attain 90% of maximum value) has a linear relationship with input capacitance. Value cited
in the table assumes zero added input capacitance. To calculate pulse rise time for practical situations, use the equation: tr =0.4 Cd
+ 7 ns, where tr is the pulse rise time in ns, and Cd is the added capacitance (e.g. detector capacitance) in pF.
Keep in mind that other factors within the detection system may further limit this value.
8
ComTec GmbH
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