Epson TG5032CGN Manual
Epson TG5032CGN Manual

Epson TG5032CGN Manual

Ultra high stability temperature compensated crystal oscillator

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Ultra high stability temperature compensated crystal oscillator
Features
Ultra high stability (< 0.1 x 10
Low phase noise
Frequency range : 10 MHz to 40 MHz
Output : CMOS, Clipped sine wave
Supply voltage : 2.375 to 3.63 V
External dimensions : 5.0 × 3.2 × 1.45 mm
Small size package (10 pads)
Pb free.
Complies with EU RoHS directive.
Applications
Small Cells
Stratum3
Femtocell
Network system etc..
Outline dimensions
Pin information
Connections
Pin
VC-TCXO
1
Vc
3
OE
4
GND
6
OUT
7
Filter / N.C
9
Vcc
2, 5, 8, 10
N.C
Product name : TG5032CGN / TG5032SGN
-6
)
TCXO
N.C
TG5032CGN (CMOS output)
TG5032SGN (Clipped sine wave output)
Description
This product is ultra high stability temperature
compensated crystal oscillator of CMOS and Clipped
sine wave outputs using fundamental oscillation of
Crystal unit. This has realized a low phase noise in
frequency 10 to 40 MHz, and it is suitable for the
reference clock include Small Cells.
This allows the product to be compliant with various
standards including GR-1244-CORE Stratum3,
G.8262.1, G.8273.2(Class A,B).
Characteristics
Frequency / temperature characteristics
1/21 Page
Temperature [ºC]
Temperature [ºC]
No.: TG5032xGN_AE_Ver. 1.06

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Summary of Contents for Epson TG5032CGN

  • Page 1 Ultra high stability temperature compensated crystal oscillator Product name : TG5032CGN / TG5032SGN Features ⚫ Ultra high stability (< 0.1 x 10 ⚫ Low phase noise ⚫ Frequency range : 10 MHz to 40 MHz ⚫ Output : CMOS, Clipped sine wave ⚫...
  • Page 2 1. Product Number / Product Name (1-1) Product Number / Ordering Code TG5032CGN: X1G005231xxxx00 (Please contact Epson for details of number xxxx) TG5032SGN: X1G005241xxxx00 (The last 2 digits code (00) define Quantity. 1 000 pcs/Reel) (1-2) Product Name / Model Name (Standard form) T G 5 0 3 2 C G N 10.000000MHz C A G H D A...
  • Page 3: Operating Conditions

    2. Electrical characteristics 1) Absolute maximum ratings Parameter Symbol Unit Min. Typ. Notes Supply voltage -GND -0.5 +4.0 C Storage temperature T_stg Store as bare product after packing Frequency control voltage -GND -0.5 +0.5 Terminal 2) Operating conditions Parameter Symbol Unit Min.
  • Page 4: Electrical Characteristics

    3-2) Frequency control characteristics (Vcc = Typ., GND = 0.0 V, Vc = Typ. V, Load = Typ., T_use = +25 °C) Parameter Symbol Unit Min. Typ. Notes -10.0 -5.0 Frequency control range f_cont Vc=1.5 V+/-1.0 V, Vc=1.65 V+/-1.0 V ×...
  • Page 5 3. Characteristics 3-1) “Frequency / Temperature Characteristics” 3-1-1) Standard spec : +/-0.1 × 10 Max. (T_use=-40 °C to +85 °C) 19.2 MHz [N = 40 pcs] Temperature [ºC] Temperature [ºC] 30.72 MHz [N = 40 pcs] Temperature [ºC] Temperature [ºC] 40 MHz [N = 40 pcs] Temperature [ºC] Temperature [ºC]...
  • Page 6 3-2) Frequency Aging (40 MHz) [N = 5 pcs] * Aging is estimated from environmental reliability tests and the expected amount of frequency variation over time. It is not intended as a guarantee of performance over the product-life cycle 3-3) Holdover Stability (19.2 MHz) [N = 40 pcs] 3-4) Frequency Control Characteristics [N = 40 pcs] No.: TG5032xGN_AE_Ver.
  • Page 7 3-5) Current Consumption 3-6) Rise time / Fall time (at CMOS output) 3-7) Output voltage [V ] (at CMOS output) 3-8) Symmetry (at CMOS output) 3-9) Output level [V ] (at Clipped sine wave) No.: TG5032xGN_AE_Ver. 1.06 7/21 Page...
  • Page 8 3-10) Start up time (19.2 MHz, 40 MHz) 19.2 MHz 40 MHz No.: TG5032xGN_AE_Ver. 1.06 8/21 Page...
  • Page 9 3-11) Phase noise (10 MHz, 19.2 MHz, 20 MHz) [N = 25 pcs] 10 MHz 19.2 MHz 20 MHz No.: TG5032xGN_AE_Ver. 1.06 9/21 Page...
  • Page 10 3-11) Phase noise (25 MHz, 30.72 MHz, 40 MHz) [n = 25 pcs] 25 MHz 30.72 MHz 40 MHz No.: TG5032xGN_AE_Ver. 1.06 10/21 Page...
  • Page 11 3-12) Short term stability [ADEV] (19.2 MHz) TCXO mode 3-13) TDEV (19.2 MHz, Loop BW = 0.1 Hz) Constant temperature : +25 ºC Constant temperature : +70 ºC 3-14) MTIE (19.2 MHz, Loop BW = 0.1 Hz) Constant temperature : +25 ºC Constant temperature : +70 ºC Compliant with G.813 option1 and 2 No.: TG5032xGN_AE_Ver.
  • Page 12 4-2) Soldering pattern Example of patterning design indicated as follows. In an actual design, please consider mounting density, the reliability of soldering, etc. and check whether performance is optimal. Soldering pattern of TG5032CGN / SGN unit : mm) Please set By-pass capacitor (0.1μF) near the Vcc pad...
  • Page 13: Timing Chart

    5. Timing chart 5-1-1) Output waveform (CMOS output) 90 % V 50 % V 10 % V SYM=tw/t×100 % 5-1-2) Output waveform (Clipped sine wave output) SYM=tw/t×100 % 5-2) OE function and timing OE input level Oscillation Outputs “H” or “Open” Enable Enable : specified frequency “L”...
  • Page 14 6. Test circuit 6-1) CMOS output for TCXO 1) Output Load : 15 pF Test Point N.C. Supply By-pass Load_C Voltage Capacitor 15 pF  2) Current consumption N.C. Supply By-pass Load_C Voltage Capacitor 15 pF  3) Conditions Min. 1 MΩ 1.
  • Page 15 6-2) CMOS output for VC-TCXO 1) Output Load : 15 pF Test Point Supply By-pass Load_C Voltage Capacitor 15 pF  Control Voltage 2) Current consumption Supply By-pass Load_C Voltage Capacitor 15 pF  Control Voltage 3) Conditions Min. 1 MΩ 1.
  • Page 16 6-3) Clipped sine wave output for TCXO 1) Output Load : 10 kΩ // 10 pF DC-cut Capacitor  0.01 Test Point N.C. By-pass Capacitor Load_C Load_R Supply 10 kΩ 10 pF Voltage  2) Current consumption DC-cut Capacitor  0.01 N.C.
  • Page 17 6-4) Clipped sine wave output for VC-TCXO 1) Output Load : 10 kΩ // 10 pF DC-cut Capacitor  0.01 Test Point Supply By-pass Voltage Capacitor Load_C Load_R 10 kΩ 10 pF  Control Voltage 2) Current consumption DC-cut Capacitor ...
  • Page 18: Packing Information

    Time [ s ] 8. Packing information (8-1) Product number last 2 digits code (00) define Quantity. 1 000 pcs/Reel. TG5032CGN: X1G005231xxxx00 (Please contact Epson for details of number xxxx) TG5032SGN: X1G005241xxxx00 (8-2) Taping specification Subject to EIA-481 IEC-60286 JIS C0806...
  • Page 19 9. Moisture Sensitivity Level, Electro-Static Discharge (9-1) Moisture Sensitivity Level (MSL) Parameter Specifications Conditions LEVEL1 JEDEC J-STD-020D (9-2) Electro-Static Discharge (ESD) Parameter Specifications Conditions EIAJ ED-4701-1 C111A, 100 pF, 1.5 kΩ, 3 times Human Body Model (HBM) 2 000 V Min EIAJ ED-4701-1 C111, 200 pF, 0 Ω, 1 time Machine Model (MM) 200 V Min...
  • Page 20: Handling Precautions

    10. Handling precautions Prior to using this product, please carefully read the section entitled “Precautions” on our Web site https://www5.epsondevice.com/en/information/#precaution ) for instructions on how to handle and use the product properly to ensure optimal performance of the product in your equipment. Before using the product under any conditions other than those specified therein, please consult with us to verify and confirm that the performance of the product will not be negatively affected by use under such conditions.
  • Page 21 Epson’s official web sites and resources. 2. This document may not be copied, reproduced, or used for any other purposes, in whole or in part, without Epson’s prior consent. 3. Information provided in this document including, but not limited to application circuits, programs and usage, is for reference purpose only.

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