Delta Electronics SISN811 Specifications

SMT Power Inductor
SISN811 Type
Features
Low profile (11.0mm max. height) SMD type.
Magnetically shielded,suitable for high density mounting.
High energy storage and low DCR.
Provided with embossed carrier tape packing.
Ideal for power source circuits, DC-DC converter,
DC-AC inverters inductor application.
In addition to the standard versions shown here,
customized inductors are available to meet your exact requirements.

Mechanical Dimension:

B
A

Electrical Characteristics:

SISN811-1R0
SISN811-1R5
SISN811-2R2
SISN811-3R6
SISN811-4R7
SISN811-5R0
SISN811-7R5
SISN811-100
SISN811-150
SISN811-220
SISN811-330
SISN811-420
SISN811-470
SISN811-680
SISN811-101
SISN811-151
SISN811-221
SISN811-331
SISN811-471
SISN811-681
SISN811-102
1. Tolerance of inductance 1.0~1000uH 20%
2. I is the DC current which cause the inductance drop less than 15% of its nominal inductance without current.
sat
3. Operating temperature : -20
DELTA ELECTRONICS, INC.
(TAOYUAN PLANT CPBG)
C
E
o
At 25 C: 100KHz, 0.1V
1
L
(uH)
1.0
1.5
2.2
3.6
4.7
5.0
7.5
10.0
15.0
22.0
33.0
42.0
47.0
68.0
100.0
150.0
220.0
330.0
470.0
680.0
1000.0
to 105 (including self-temperature rise).
252,SHANGYING ROAD, GUISHAN INDUSTRIAL ZONE, TAOYUAN COUNTY, 33341, TAIWAN, R.O.C.
TEL: 886-3-3591968; FAX: 886-3-3591991
http://www.deltaww.com
RECOMMENDED PAD
D
9.6
3.2
1.9
F
DCR
( )MAX
0.004
0.005
0.0058
0.010
0.009
0.010
0.0135
0.040
0.050
0.066
0.080
0.100
0.110
0.170
0.220
0.340
0.440
0.700
0.950
1.200
2.000
UNIT : mm / inch
A = 13.1 / 0.516 Max.
B = 9.254 0.254 / 0.364 0.01
C = 11.0 / 0.433 Max.
D = 2.5 0.254 / 0.098 0.01
E = 1.2 0.30 / 0.047 0.012
F = 0.80 / 0.031
G = 1.9 / 0.075
H = 3.2 / 0.126
I = 9.6 / 0.378
2
I
sat
(Adc)
22.0
22.0
18.0
14.0
6.0
15.0
6.0
8.0
7.0
5.5
4.0
3.0
3.8
3.0
2.5
2.0
1.6
1.2
1.0
1.0
0.8