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Silicon Laboratories Si3210 Design Manual

Silicon Laboratories Si3210 Design Manual

Dc-dc converter

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D
G
E S I G N
U ID E F O R T H E
1. Introduction
The ProSLIC® from Silicon Laboratories integrates a
complete
analog
telephone
low-voltage CMOS device and offers extensive software
programmability to meet many global telephony
requirements and customer specifications. In addition to
performing all BORSCHT functions, the Si321x also
dynamically generates and controls its own battery
voltage, eliminating the need for external battery
supplies. Two different battery generation architectures
are supported: a BJT/inductor design offering a low-cost
battery supply solution, and a MOSFET/transformer
design offering increased power efficiency and a wider
range of input voltages. This application note gives
Input
+
V
DC
Rev. 0.61 8/09
S i 3 2 1 0 / 1 5 / 1 6 D C - D C C
interface
into
one
Output
+
DC-DC
V
Converter
BAT
Linefeed Circuitry
Figure 1. Linefeed Power Diagram
Copyright © 2009 by Silicon Laboratories
specific guidance in determining dc-dc converter power
requirements and selecting component values for each
of the dc-dc converter architectures.
1.1. Si321x DC-DC Converter Description
The dc-dc converter dynamically generates the large
negative voltages required to operate the linefeed
interface. The Si321x acts as the controller for a
buck-boost dc-dc converter that converts a positive dc
voltage into the desired negative battery voltage. In
addition to eliminating external power supplies, this
allows the Si321x to minimize power dissipation by
dynamically controlling the battery voltage to the
minimum required for any given mode of operation.
Twisted
Pair Line
R
LINE
2
TIP
+
V
TR
R
LINE
2
RING
Ringer
AN45
O N V E R T E R
Telephone
Hook SW.
RDC
AN45

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Summary of Contents for Silicon Laboratories Si3210

  • Page 1 U ID E F O R T H E O N V E R T E R 1. Introduction specific guidance in determining dc-dc converter power requirements and selecting component values for each The ProSLIC® from Silicon Laboratories integrates a of the dc-dc converter architectures. complete analog telephone...
  • Page 2 AN45 1.2. Power Output Requirement The worst-case peak current for NREN load is when the load is connected with a short loop of negligible line Understanding the maximum power required by the resistance. ProSLIC linefeed circuitry to operate a worst-case specified load is the first step in determining the dc-dc converter design solution.
  • Page 3 AN45 1.3. Power Input Requirement The power equation for this mode is as follows: The input power is equal to the output power plus the    OFFHOOK LOOPMAX wasted power during the power conversion process. Equation 6 The efficiency of the Si321x dc-dc converter is mainly where V is set by the direct Register 73, and V dependent on the inductor loss (copper and magnetic...
  • Page 4 AN45 1.4. Component Selection for BJT/Inductor Figure 2. Components in this circuit are discussed, and detailed descriptions for each functional block are Solution provided to guide the designer through the component The typical circuit application for the BJT/inductor value selection process. version of the Si321x dc-dc converter is shown in +VDC Fuse...
  • Page 5 AN45 The rate of the current increase depends on V the inductance of L1. ---------- -  ONMAX So, the maximum on-time is as follows: i t    ---------- -  As the output demands more energy, the Si321x ----------------- - ONMAX lengthens Q7 on-time to increase the L1 inductor...
  • Page 6 AN45 Substituting the above expression for the power    V  Equation 8: OFFMAX Direct Register 93 ---------------------- - ---------------------------------------- - 61 ns 61 ns ------------------------------------------------- - --------------------------------------------------------------------------- - Equation 15     ONMAX OFFMAX 1.4.3. Selecting a DC-DC Converter Switching Tran- sistor ...
  • Page 7 AN45 1.5. Undervoltage and Overcurrent 1.4.4. Si321x Bipolar Switch Driver Protection In Figure 2, the Q8 collector current provides the base current drive that turns the switch transistor Q7 on. The The Si321x dc-dc converter is designed to operate base current drive should be sufficient to keep Q7 in under a specific input voltage and output loading saturation at I .
  • Page 8: Output Overvoltage Protection

    AN45 1.6. Output Overvoltage Protection 1.5.1. Undervoltage Lock-Out The undervoltage lock-out is implemented via the It is possible for the dc-dc converter to generate SDCH pin as shown in Figure 5. When the V goes excessively high voltage beyond the voltage rating of under a specified value, the current flow through R19 external components.
  • Page 9 AN45 From Equation 3: 1.7.3. Step 3: Define Input Requirement for the 12 V   2 NREN From Equation 8: TR_PK  -- - ----------------------------------------------------- -  7000 -------------------------- - -------------------- - 0.4 A     5 76.5 12 0.6 ------------------------------ 34.79 mA...
  • Page 10 AN45 1.7.5. Step 5: Selecting the Q7 Switching Transistor 1.7.7. Step 7: Under Voltage Circuit Design Transistor requirement: Set under voltage lock-out to be 20% lower than the minimum V  88 V  VDC 1–20%  UNDER  93 V ...
  • Page 11 AN45 1.8. MOSFET/Transformer Design The transformer dc-dc converter circuit is shown in Figure 6. R16, R17, Q7, and Q8 are eliminated. The M1 DC-DC Converter MOSFET is the main power-switching component in this The MOSFET/transformer dc-dc converter solution design. The Si321xM version of the ProSLIC is used to offers higher power efficiency than the BJT/inductor directly drive the M1 MOSFET using the DCFF pinout.
  • Page 12 AN45 1.8.4. Switching MOSFET Requirements 17.7 To optimize the Si321xM dc-dc converter performance, logic level MOSFET is recommended as the dc-dc 2.54 switching element. This allows the DCFF pin to drive the MOSFET directly. Table 3. Switch MOSFET M1 > N x V >...
  • Page 13 AN45 1.8.6. MOSFET/Transformer DC-DC Converter Design Procedure The transformer dc-dc converter design procedure is similar to the design of the inductor dc-dc converter. Below are design steps based on the BJT/inductor design example. 1. Step 1 to step 2 are identical to the BJT/inductor dc-dc converter 2.
  • Page 14 AN45 OTES Rev. 0.61...
  • Page 15: Document Change List

     Changed .312 to .46 in last paragraph.  Added SLIC series resistance.  VCMR adjustment.  Changed Si3210 to Si321x throughout.  Revision 0.5 to Revision 0.6 Updated "1.8.4. Switching MOSFET Requirements"  on page 12. Updated text. ...
  • Page 16: Contact Information

    Silicon Laboratories products are not designed, intended, or authorized for use in applications intended to support or sustain life, or for any other application in which the failure of the Silicon Laboratories product could create a situation where per- sonal injury or death may occur.

This manual is also suitable for:

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