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Transphorm Daughter Card TDHB-65H070L-DC for basic study of switching characteristics and efficiency achievable with Transphorm’s 650V GaN FETs in the standard 8x8 PQFN package. In either buck or boost mode the circuit can be configured for synchronous rectification. Jumpers allow use of a single logic input or separate hi/lo inputs. The high-voltage input and output can operate at up to 400Vdc, with a power output of up to 1.2kW.
TDHBG1200DC100 User Guide Warnings TDHGB1200DC100 input/output specifications High-voltage input/output: 400Vdc max Auxiliary supply (J1): 10V min, 18V max Logic inputs: nominal 0V-5V Pulse-generation circuit: Vlo < 1.5V, Vhi > 3.0V Direct connection to gate driver: Vlo < 0.8V, Vhi > 2.0V...
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TDHBG1200DC100 User Guide TP65H070LDG TP65H070LSG Figure 3. Functional block diagram Using the evaluation The mother board and daughter card can be used for evaluation of basic switching functionality in a variety of circuit configurations. It is not a complete circuit, but rather a building block. It can be used in steady-state DC/DC converter mode with output power up to 1.2kW.
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TDHBG1200DC100 User Guide TP65H070LDG TP65H070LSG (a) Buck mode TP65H070LDG TP65H070LSG (b) Boost mode Figure 4. Supply and load connections for buck (a) and boost (b) configurations Figure 5 shows possible configurations for the gate-drive signals. In Figure 5(a), a single input from an external signal source is used together with the on-board pulse generation circuit.
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TDHBG1200DC100 User Guide configuration where the low-side device is not enhanced. Finally, Figure 5(c) shows use of two external signal sources as inputs to the gate driver. For any configuration, an auxiliary supply voltage of 10V-18V must be supplied at connector J1.
See Figure 7 for a detailed circuit schematic and Figure 8 for the PCB layers (also included in the design files). The parts list for TDHBG1200DC100 can be found in Table 1. The parts list for TDHB-65H070L-DC can be found in Table 2.
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TDHBG1200DC100 User Guide Table 1. TDHBG1200DC100 half-bridge evaluation board bill of materials (BOM) Designator Qty Value Description Part Number Manufacturer 74LVC1G17DBV SN74LVC1G17DBVR Texas Instruments JP1, JP2 JP2E 68001-403HLF J2, J3, J5, KEYSTONE_7691 7691 Keystone LED1 LEDCHIP-LED0805 SML-211UTT86 Rohm LT3082 LT3082EST#PBF...
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TDHBG1200DC100 User Guide Table 2. TDHBG1200DC100 half-bridge evaluation board bill of materials (BOM) Value Device Parts Digikey PN RMCF0603ZT0R00CT- R-US_R0603 R0, RGND 0.1uF C-USC0603 C2, C6, C7 399-1282-1-ND 0.1uF C-USC0805 C3, C4, C8, C10 732-8109-1-ND 1.3uH CMC_74423580 CMC1 732-4222-1-ND R-US_R1206...
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TDHBG1200DC100 User Guide Figure 7a. Detailed circuit schematic (TDHBG1200DC100) TDHBG1200DC100_0v1 April 23, 2019...
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TDHBG1200DC100 User Guide Figure 7b. Detailed circuit schematic (TDHB-65H070-DC) TDHBG1200DC100_0v1 April 23, 2019...
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TDHBG1200DC100 User Guide (a) TDHBG1200DC100 PCB top layer (b) TDHBG1200DC100 PCB bottom layer TDHBG1200DC100_0v1 April 23, 2019...
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TDHBG1200DC100 User Guide (b) TDHB-65H070L-DC PCB bottom layer (c) TDHB-65H070L-DC PCB inner layer 2 (ground plane) + inner layer 3 (power plane) Figure 9. TDHB-65H070L-DC PCB layers Probing Plated through-holes labeled test point (LDS) are provided for probing the low-side gate pulse and half-bridge switching node waveform.
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TDHBG1200DC100 User Guide WARNINGS: There is no specific protection against over-current or over-voltage on this board. If the on-board pulse generation circuit is used in boost mode, a zero input corresponds to 100% duty cycle for the active low- side switch.
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