Transphorm TDINV1000P100 User Manual

1kw inverter evaluation board

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User Guide
TDINV1000P100: 1kW Inverter Evaluation Board
Introduction
The TDINV1000P100 1kW inverter kit from Transphorm provides an easy way to evaluate the performance advantages of GaN
power transistors in various inverter applications, such as solar and UPS. The kit provides the main features of a single-phase
inverter in a proven, functional configuration, operating at or above 100kHz. At the core of the inverter are four 150mΩ GaN
FETs configured as a full bridge. These are tightly coupled to gate-drive circuits on a board which also includes flexible
microcontroller options and convenient communication connection to a PC. The switch-mode power signals are filtered to
provide a pure sinusoidal output.
The TDINV1000P100-KIT is for evaluation purposes only.
Figure 1. TDINV1000P100 inverter evaluation board
The control portion of the circuit is designed around the popular C2000™ family of microcontrollers from Texas Instruments (TI).
The source code is available along with related support information directly from TI. In addition to this general resource,
Transphorm provides original firmware which comes loaded in flash on the microcontroller. The source code, configured as a
complete project, is also available at transphormusa.com/pv1fw. This project is a convenient starting point for further
developments. The microcontroller itself resides on a small, removable control card, supplied by TI, so that different C2000
devices may be used if desired. The schematic for the TDINV1000P100 circuit board is provided at the end of this user guide
document, as well in the design files at transphormusa.com/pv1kit.
August 3, 2017
© 2017 Transphorm Inc. Subject to change without notice.
evk006.2
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  • Page 1 The microcontroller itself resides on a small, removable control card, supplied by TI, so that different C2000 devices may be used if desired. The schematic for the TDINV1000P100 circuit board is provided at the end of this user guide document, as well in the design files at transphormusa.com/pv1kit.
  • Page 2: Circuit Description

    Refer to Figure 2 for a block diagram of the inverter circuit. A detailed schematic is also available in the design files at transphormusa.com/pv1kit. The TDINV1000P100 inverter is a simple full-bridge inverter. Two GaN half-bridges are driven with pulse-width modulated (PWM) command signals to create the sinusoidally varying output. The output filter largely removes the switching frequency, leaving the 50/60Hz fundamental sinusoid.
  • Page 3: Gate Drivers

    TDINV1000P100 User Guide Power Stage High Voltage DC Input SENSE Hi/Lo Gate Driver controlCARD Isolated USB Interface JTAG Output TMS320F28069 Microcontroller UART Hi/Lo Hall Sensor Gate Driver Feedback Current Voltage Low Voltage Supply Half-bridge Filter Feedback +3.3V -15V Input Figure 2. Circuit block diagram The inverter takes advantage of diode-free operation, in which the freewheeling current is carried by the GaN FETs themselves, without the need of additional freewheeling diodes.
  • Page 4: Output Filter

    TDINV1000P100 User Guide Output filter A simple LCL filter on the output (L3, L4, C37 and C54 - C57) attenuates the switching frequency, producing a clean sinusoidal waveform for output connections in terminals J4 and J5. The filter inductors and capacitors used on the demo board were chosen to provide the optional combination of benefits: low loss, good attenuation of the switching frequency, and small size.
  • Page 5: Connection Sequence

    TDINV1000P100 User Guide Note that only the USB port is isolated; all other signals on the board are referenced to the negative terminals of the high and low voltage supplies, which are tied together on the PCB. The heatsinks are also connected to the negative terminals of the supplies.
  • Page 6 TDINV1000P100 User Guide Test Figure 5 shows typical waveforms. The negative terminal of the high-voltage supply is a convenient reference for the oscilloscope measurements, provided there are not multiple connections to earth ground. Typical efficiency results are shown in Figure 6. These data points correspond to efficiency measurements made in still air with 20 minutes’...
  • Page 7: Design Details

    See Figure 7 for a detailed circuit schematic and Figure 8 for the PCB layers (also included in the design files). The parts list can be found in Table 1. Table 1. TDINV1000P100 evaluation board bill of materials (BOM) Designator Value Description...
  • Page 8 TDINV1000P100 User Guide Designator Value Description Part Number Manufacturer R22, R29 10.2kΩ R0603 ERJ-3EKF1022V Panasonic 10MΩ R1206 HVCB1206FKC10M0 Stackpole R12, R16 10kΩ R0603 ERJ-3GEYJ103V Panasonic C32, C35, C41, C44 10µF C0805 C0805C106M4PACTU Kemet 10µF C1206 CL31A106KAHNNNE 22µF C1206 CL31X226KAHN3NE Samsung Electronics L1, L2 22µH...
  • Page 9 TDINV1000P100 User Guide August 3, 2017 transphormusa.com evk0006.2...
  • Page 10 TDINV1000P100 User Guide August 3, 2017 transphormusa.com evk0006.2...
  • Page 11 TDINV1000P100 User Guide Figure 7. Detailed circuit schematics August 3, 2017 transphormusa.com evk0006.2...
  • Page 12 TDINV1000P100 User Guide (a) PCB top layer (b) PCB bottom layer August 3, 2017 transphormusa.com evk0006.2...
  • Page 13 FET source. See Figure 9 for an alternative that does not require soldering the probe tip. Warnings There is no specific protection against over-current or over-voltage on this board. The TDINV1000P100 board is for evaluation purposes only. August 3, 2017 transphormusa.com...
  • Page 14 TDINV1000P100 User Guide Figure 9. Low-inductance probing of fast, high-voltage signals August 3, 2017 transphormusa.com evk0006.2...

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