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9.5. Temperature
Test Conditions
Connect the power resistor (85 Ω) to the CON2 and measure the saturated temperature.
Table 10. Test Result of V
BoostPak (Q11)
MOSFET (Q12)
© 2013 Fairchild Semiconductor Corporation
= 55 V (35 W)
OUT
V
=20.4 V
IN
66.9°C
Inductor
63.7°C
R8~R14
57.6°C
50.8°C
R45~R49
58.9°C
74.0
72.0
70.0
68.0
66.0
64.0
62.0
60.0
58.0
56.0
54.0
52.0
50.0
20.4
Figure 27.
Figure 28.
V
=24 V
IN
61.5°C
59.6°C
52.8°C
50.0°C
57.3°C
24
Input Voltage, Vin [V]
Temperature Curve
BoostPak(FDD850N10LD, Q11) = 61.5℃
IR Image for V
=24 V
IN
21
V
=27.6 V
Remark
IN
59.3°C
56.6°C
PKG Top
49.8°C
52.1°C
60°C
27.6
FEBFDD850N10LD_CS001 • Rev. 1.0.0
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