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9.3. Loss Analysis
Test Conditions
Connect the power resistor (85 Ω) to the CON2 and measure the output voltage and
current on the BoostPak (FDD850N10LD) after 30 minutes aging.
Table 7.
Input
Voltage
P
ON
(V)
(W)
20.4
0.17
24
0.15
27.6
0.13
Power Loss of MOSFET
Econd_M
27%
Eoff_M
28%
Conduction loss
Turn off loss
Turn on loss
© 2013 Fairchild Semiconductor Corporation
Test Results
MOSFET
P
P
OFF
COND
(W)
(W)
0.11
0.14
0.09
0.09
0.09
0.07
Power Loss of Diode
Eon_M
45%
Econd_D
57%
Figure 21.
Power distribution
1.00
0.80
0.60
0.40
0.20
0.00
MOSFET
0.09
0.09
0.15
Figure 22.
Loss Distribution for V
P
P
P
TOT
ON
OFF
(W)
(W)
(W)
0.42
0.02
0.38
0.34
0.02
0.37
0.28
0.02
0.36
Eon_D
2%
Eoff_D
41%
Loss Analysis for V
=24 V
IN
Diode
0.52
0.37
0.02
=24 V
IN
17
Diode
P
P
COND
TOT
(W)
(W)
0.53
0.93
0.52
0.91
0.52
0.90
Total Power Loss
Eoff_M
Eon_M
8%
12%
Econd_M
Econd_D
7%
41%
Eon_D
2%
Eoff_D
30%
FEBFDD850N10LD_CS001 • Rev. 1.0.0
Total
P
D
(W)
1.34
1.24
1.18
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