ON Semiconductor Fairchild FEBFDD850N10LD_CS001 User Manual

35 w boost converter for led drive using boostpak

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Summary of Contents for ON Semiconductor Fairchild FEBFDD850N10LD_CS001

  • Page 1 ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA...
  • Page 2 User Guide for FEBFDD850N10LD_CS001 35 W Boost Converter for LED Drive using BoostPak Featured Fairchild Product: FDD850N10LD Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com FEBFDD850N10LD_CS001 • Rev. 1.0.0 © 2013 Fairchild Semiconductor Corporation...
  • Page 3: Table Of Contents

    Table of Contents 1. Introduction ..........................3 1.1. Description ........................3 1.2. Features ..........................3 1.3. FDD850N10LD Diagrams ....................3 2. Evaluation Board Specifications ....................4 3. Photographs..........................5 4. Printed Circuit Board ........................ 6 5. Schematic ..........................7 6. Bill of Materials ........................8 7.
  • Page 4: Introduction

    This user guide supports the evaluation kit for the FDD850N10LD. It should be used in conjunction with the FDD850N10LD datasheets as well as Fairchild’s application notes and technical support team. Please visit Fairchild’s website at www.fairchildsemi.com. Introduction This document describes the proposed solution for a driving of LED application using the BoostPak (FDD850N10LD) for boost topology.
  • Page 5: Evaluation Board Specifications

    Evaluation Board Specifications All data was measured under the condition, T =25°C. Table 1. Summary of Features and Performance Description Symbol Value Comments 20.4 V IN, MIN. Input Voltage 24.0 V IN, TYP. 27.6 V IN, MAX. Switching Frequency 200 kHz R35 (kΩ)=15000/f (kHz) 55 V...
  • Page 6: Photographs

    Photographs Figure 3. Top View (114 x 76 mm Figure 4. Bottom View (114 x 76 mm FEBFDD850N10LD_CS001 • Rev. 1.0.0 © 2013 Fairchild Semiconductor Corporation...
  • Page 7: Printed Circuit Board

    Printed Circuit Board 114.3mm Figure 5. Top Side 114.3mm 114.3mm Figure 6. Bottom Side FEBFDD850N10LD_CS001 • Rev. 1.0.0 © 2013 Fairchild Semiconductor Corporation...
  • Page 8: Schematic

    Schematic Figure 7. Evaluation Board Schematic FEBFDD850N10LD_CS001 • Rev. 1.0.0 © 2013 Fairchild Semiconductor Corporation...
  • Page 9: Bill Of Materials

    Bill of Materials Item Reference Part No. Qty. Description Manufacturer Fairchild FDD850N10LD BoostPak, D-Pak 5L Semiconductor Fairchild 150 V / 14 A / 120 Ω, D-Pak FDD120AN15A0 Semiconductor KTD1624 3 A / 60 V / NPN BJT, SOT-89 DONGYANG 47µH / 0.073 Ω / 5 A, SMD Inductor DYCP1580-470 TELECOM Main Controller...
  • Page 10 Item Reference Part No. Qty. Description Manufacturer R40, R43 MCR03ERTF3002 30 kΩ SMD Resistor 1608 Rhom 0 Ω SMD Resistor 1608 R41, R42 MCR03ERTF0000 Rhom R45, R46, R47, 7.5 Ω SMD Resistor 2012 MCR10ERTJ7R5 Rhom R48, R49 MCR03ERTF5102 51 kΩ SMD Resistor 1608 Rhom R59, R60 MCR03ERTF5101...
  • Page 11: Inductor Specifications

    Inductor Specifications  Manufacturer: DONGYANG TELECOM CO., LTD. TEL : 032-584-0100 942-5, Dohwa-Dong, Nam-gu, HEAD OFFICE & FACTORY Incheon, Korea FAX : 032-584-0101 TEL : 86-536-790-2048 No.28 Feng Huang Street, China Factory Weifang Shandong, CHINA FAX : 86-536-760-2046 TEL : 66-81-933-5740 3/3 Moo.
  • Page 12: Test Conditions & Test Equipment

    Test Conditions & Test Equipment Table 4. Test Conditions & Test Equipment Evaluation Board # FEBFDD850N10LD_CS001 Test Date Test Temperature =25°C DC Power Supply: H-3005D by FinePower Power Analyzer: PM3000A by Voltech Load: 100 W 100 ΩJ Adjustable Resistor Oscilloscope: DPO7104 by Tectronix Test Equipments Passive voltage probe - P6139 Differential high voltage probe - P5205...
  • Page 13: Performance Of Evaluation Board

    Performance of Evaluation Board 9.1. Switching Waveforms Test Conditions Connect the power resistor (85 Ω) to CON2 and measure the voltage and current stress on the BoostPak (FDD850N10LD) under the specified conditions below. Table 5. Test Result Input Voltage (V) Remarks 20.4 27.6...
  • Page 14 9.1.1. Power On Waveforms: C1 (V : 5 V/div), C2 (V : 20 V/div), C3 (I : 1 A/div), C4 (V : 20 V/div), Time (20 ms/div) Figure 11. =20.4 V Figure 12. =24 V Figure 13. =24 V FEBFDD850N10LD_CS001 • Rev. 1.0.0 ©...
  • Page 15 9.1.2. Normal Waveforms: C1 (V : 5 V/div), C2 (V : 20 V/div), C3 (I : 1 A/div), C4 (V : 20 V/div), Time (10 µs/div) Figure 14. =20.4 V Figure 15. =24 V Figure 16. =24 V FEBFDD850N10LD_CS001 • Rev. 1.0.0 ©...
  • Page 16 9.1.3. Power Off Waveforms: C1 (V : 5 V/div), C2 (V : 20 V/div), C3 (I : 1 A/div), C4 (V : 20 V/div), Time (50 ms/div) Figure 17. =20.4 V Figure 18. =24 V Figure 19. =24 V FEBFDD850N10LD_CS001 • Rev. 1.0.0 ©...
  • Page 17: Output Regulation Characteristics

    9.2. Output Regulation Characteristics Test Conditions Connect the power resistor (85 Ω, 100 Ω) to the CON2 and measure the output voltage and current on the BoostPak (FDD850N10LD) after 30 minutes aging. Table 6. Test Results =35 W =45 W Input Remarks Voltage (V)
  • Page 18: Loss Analysis

    9.3. Loss Analysis Test Conditions Connect the power resistor (85 Ω) to the CON2 and measure the output voltage and current on the BoostPak (FDD850N10LD) after 30 minutes aging. Table 7. Test Results MOSFET Diode Input Total Voltage COND COND 20.4 0.17 0.11...
  • Page 19 1.80 MOSFET 1.60 Diode 1.40 Total loss 1.20 1.00 0.80 0.60 0.40 0.20 0.00 20.4 27.6 Input Voltage, Vin [V] Figure 23. Loss Comparison for Input Voltage, V Waveforms: C1 (V : 5 V/div), C2 (V : 20 V/div), C3 (I : 1 A/div) 4-Period Waveforms, Time (2 µs/div) Conduction Waveforms, Time (500 ns/div)
  • Page 20 Waveforms : C1(V :5V/div), C4(V :20V/div), M2(I :1A/div) 4-Period Waveforms, Time (2 µs/div) Conduction Waveforms, Time (500 ns/div) Turn-On Waveforms, Time (50 ns/div) Turn-Off Waveforms, Time (50 ns/div) Figure 25. Diode Waveforms for V =24 V FEBFDD850N10LD_CS001 • Rev. 1.0.0 ©...
  • Page 21: Efficiency

    9.4. Efficiency Test Conditions Connect the power resistor (85 Ω, 100 Ω) to the CON2 and measure the output voltage and current on the BoostPak (FDD850N10LD) after 30 minutes aging. Table 8. Test Results of V = 55 V ( 35 W) Input Voltage Input Power Output Power...
  • Page 22: Temperature

    9.5. Temperature Test Conditions Connect the power resistor (85 Ω) to the CON2 and measure the saturated temperature. Table 10. Test Result of V = 55 V (35 W) =20.4 V =24 V =27.6 V Remark 66.9°C 61.5°C 59.3°C BoostPak (Q11) Inductor 63.7°C 59.6°C...
  • Page 23: Emi

    9.6. EMI Test Conditions Frequency Sub-Range: 30 MHz ~ 1000 MHz Load is five strings of LEDs. [dB(uV/m)] ― Vertical ― CISPR22 ClassB Horizontal 1000 Frequency [MHz] Figure 29. Radiated Emissions: V =24 V FEBFDD850N10LD_CS001 • Rev. 1.0.0 © 2013 Fairchild Semiconductor Corporation...
  • Page 24: Revision History

    10. Revision History Rev. Date Description 1.0.0 May 2013 Initial Release WARNING AND DISCLAIMER Replace components on the Evaluation Board only with those parts shown on the parts list (or Bill of Materials) in the Users’ Guide. Contact an authorized Fairchild representative with any questions. This board is intended to be used by certified professionals, in a lab environment, following proper safety procedures.
  • Page 25 FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized...

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