sensl J series User Manual

J-Series
High PDE and Timing Resolution, TSV Package
USER MANUAL
High-Density Fill Factor Silicon Photomultipliers
SensL's J-Series low-light sensors feature an industry-leading low dark count rate and a high PDE that extends
much further into the blue part of the spectrum using a high-volume, P-on-N silicon process. Improvements have
been made to both the standard (anode-cathode) rise time and the recovery time, in addition to the inclusion of
SensL's unique fast output that offers sub-nanosecond pulse widths. J-Series sensors are available in different sizes
(3mm and 6mm) and use TSV (Through Silicon Via) technology to create a CSP (Chip Scale Package) with minimal
deadspace, that is compatible with industry standard, lead-free, reflow soldering processes.
The J-Series Silicon Photomultipliers (SiPM) form a range of high gain,
single-photon sensitive, UV-to-visible light sensors. They have performance
characteristics similar to a conventional PMT, while benefiting from the
practical advantages of solid-state technology: low operating voltage,
excellent temperature stability, robustness, compactness, output uniformity,
and low cost. For more information on the J-Series sensors please refer to
the datasheet.

Overview

J-Series SiPM sensors from SensL are based on a P-on-N diode structure
(Figure 1), which provides optimized PDE at the blue end of the visible
spectrum, and feature a number of significant performance upgrades:
PDE: J-Series sensors feature increased microcell density, giving an overall
improvement to PDE (with a peak at 50%), along with other optimizations
that extend the sensitivity into the UV, (>5% PDE at 250nm). This PDE
improvement is achieved while keeping the dark count rate low.
Figure 2, Simplified microcell level schematic of
the J-Series SiPM.
Timing: J-Series sensors feature reduced microcell recovery time
and standard signal rise time. All J-Series sensors also feature
SensL's proprietary fast output terminal (Figure 2), which is the
derivative of the internal fast switching of the microcell in response
to the detection of a single photon, which has sub-nanosecond
rise times and pulse-widths.
Package: J-Series sensors are available as either a 3mm or 6mm
chip packaged using a TSV (through-silicon via) process to create
a CSP (Chip Scale Package) with minimal deadspace. The TSV
sensors have a number of ball contacts on the reverse, giving
access to the fast output as well as the anode and cathode.
SensL © 2015
J-Series
Figure 1, P-on-N sensor structure
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