InGaAs Biased Detector
The table below gives some advantages to each common type of detector
material.
Material
Silicon (Si)
Germanium (Ge)
Gallium Phosphide (GaP)
Indium Gallium Arsenide
(InGaAs)
Extended Range: Indium
Gallium Arsenide (InGaAs)
4.5. Junction Capacitance
Junction capacitance (C
have a profound impact on the bandwidth and the response of a photodiode. It
reaffirms that larger diode areas encompass a greater junction volume with
increased charge capacity. In a reverse bias application, the depletion width of
the junction increases, thus effectively reducing the junction capacitance and
increasing the response speed.
4.6. Bandwidth and Response
A load resistor will react with the photodetector junction capacitance to limit the
bandwidth. For best frequency response, a 50 Ω terminator should be used in
conjunction with a 50 Ω coaxial cable. The bandwidth (f
response (t
) can be approximated using the junction capacitance and the load
r
resistance (R
LOAD
a
Approximate values, actual wavelength values will vary from unit to unit.
Page 6
) is an important property of a photodiode as this can
J
):
Dark
Current
Speed
Low
High
High
Low
Low
High
Low
High
High
High
1
2
0.35
Chapter 4: Operation
a
Sensitivity
(nm)
400 – 1000
900 – 1600
150 – 550
800 – 1800
1200 – 2600
) and the rise time
BW
Cost
Low
Low
Med
Med
High
15830-D02
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