Si Biased Detector
Chapter 7 Specifications
All measurements are performed at 25 °C ambient temperature unless stated
otherwise.
Detector
Active Area
Wavelength Range
Peak Wavelength
Peak Response
Shunt Resistance
Diode Capacitance
b,c,d
Rise Time
NEP (830 nm)
Photodiode Bias Voltage
Dark Current
Output Voltage
On/Off Switch
Battery Check Switch
Output
Package Size
PD Surface Depth
Weight
Accessories
Storage Temp
Operating Temp
Battery
Low Battery Voltage
V
(Hi-Z)
OUT
V
(50Ω)
OUT
a
When long-term UV light is applied, the product specifications may degrade. For example,
the product's UV response may decrease and the dark current may increase. The degree
to which the specifications may degrade is based upon factors such as the irradiation
level, intensity, and usage time.
b
Measured with specified bias voltage of 10.0 V.
c
Low battery voltage will result in slower rise times and decreased bandwidth.
d
For a 50 Ω Load
e
Measured with a 1 MΩ Load
f
Assumes the battery voltage drops below 9.6 V. The reverse protection diode generates a
0.6 V drop.
Page 12
Electrical Specifications
a
b
e
f
-
-
λ
λ
p
( λ
)
p
R
sh
C
J
t
r
-
5.0 x 10
V
R
I
D
V
OUT
General
Momentary Pushbutton
BNC (DC Coupled)
(70 mm x 48 mm x 21 mm)
SM1RR Retainer Ring
A23, 12 V
(See Battery Check)
Chapter 7: Specifications
Silicon
Ø1.0 mm (0.8 mm
200 to 1100 nm
730 nm (Typ.)
0.44 A/W (Typ.)
1 GΩ (Typ.)
6 pF (Typ.)
1 ns (Typ.)
-14
W/√Hz (Typ.)
10 V
0.3 nA (Typ.)
2.5 nA (Max)
0 to 10 V
Slide
2.8" x 1.9" x 0.83"
0.13" (3.4 mm)
0.2 kg
SM1T1 Coupler
-20 to 70 °C
10 to 50 °C
, 40 mAh
DC
~9 V
~400 mV
2
)
13052-D05
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