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Devices for Mobile Equipment
■ Flash Unit
[Use Example]
FRD
Battery
Trans
Control IC
S/W element
Bipolar Transistors (NPN)
Absolute maximum ratings/Ta=25˚C
Type No.
Package
Polarity
V CEO
[V]
CPH3223
NPN
50
CPH
CPH3236
NPN
50
MOSFETs (Nch)
Absolute maximum ratings/Ta=25˚C
Type No.
Package
Polarity
V DSS
V GSS
[V]
[V]
● MCH6422
Nch
60
10
MCH6424
MCPH6
Nch
60
10
● MCH6423
Nch
60
20
Bipolar Transistors (NPN) + MOSFETs (Nch)
Absolute maximum ratings/Ta=25˚C
TR
MOSFET
Type No.
Package
V CEO
I C
P C
V DSS
V GSS
[V]
[A]
[W]
[V]
[V]
VEC2901
VEC8
50
5
1.1
30
10
IGBT Drivers
V DD
V IN / V OUT
Type No.
Package
[V]
TND721MH5
MCPH5
-0.3 to 7.5
-0.3 to V DD +0.3
Flash Circuit IGBTs
Absolute maximum ratings/Ta=25˚C
V GES
Type No.
Package
Polarity
V CES
(DC)
[V]
[V]
● TIG030TS
Nch
400
±6
TSSOP8
● TIG032TS
Nch
400
±6
FRD
V R
Type No.
Package
[V]
RE0208DA
SOD-323
800
300V
Xe-tube
Trigger
IGBT
C M
transformer
IGBT
DRIVER
Electrical characteristics/Ta=25˚C
h FE
V CE (sat) [V]
I C
P C
I C
I B
[A]
[W]
min
max
[A]
[mA]
3
0.9
200
560
1
50
3
0.9
250
400
1
50
Electrical characteristics/Ta=25˚C
R DS (on) [Ω]
I D
P D
V GS =10V
V GS =4V
V GS =2.5V
[A]
[W]
typ
max
typ
max
typ
max
2
1.5
-
-
0.17
0.22
0.19
0.27
3
1.5
-
-
0.085
0.115
0.095
0.135
2
1.5
0.17
0.22
0.21
0.3
-
-
Electrical characteristics/Ta=25˚C
TR
h FE
V CE (sat) [V]
R DS (on) [Ω]
Cob
I D
P D
typ
V GS =4V
I C
I B
[A]
[W]
min
max
typ
max
[pF]
[A]
[mA]
typ
max
0.15 0.25 250 400 26
1.6
53 0.055 0.11 2.9
3.7
3.7
I O +/I O -typ [mA]
V IH
V IL
P D
min
max
V DD =5V
[V]
[W]
[V]
[V]
CL [pF]
0.8
2
1
5000
50
Electrical characteristics/Ta=25˚C
V GE (off) [V]
V CE (sat) [V]
I CP
V CE
I C
I C
V GE
[A]
min
max
min
max
[V]
[mA]
[A]
[V]
150
10
1
0.5
1.2
150
4
3.7
5.4
180
10
1
0.4
1
150
2.5
3.4
4.8
V F
I R
I O
I F =0.1A
V R =400V
I F =I R =100mA, See specifi ed test circuit
[mA]
[V]
[μA]
200
4.0
3
10
■ Condenser Microphone
[High-Frequency Devices Use Example]
Impedance transformation
High-Frequency Devices for Condenser Microphone
Type No.
typ
max
TF246
TF252
0.09
0.13
TF202C
0.06
0.1
TF222B
TF218THC
●: New products
TF208TH
TF252TH
Ciss
Qg
[pF]
[nC]
325
4.2
Type No.
690
8.2
220
6.4
EC4K11KF
EC4K14MF
ECSP1410 (1.4×1.0×0.32)
■ USB (3.3V) Signal Line Protection Devices
MOSFET
[Use Example]
Ciss
Qg
V GS =2.5V
typ
typ
[pF]
[nC]
typ
max
5.2
7
1.58
V DD =2.5V
CL [pF]
5000
10
●: New products
Recommended Device
Cies
V CE
f
typ
[V]
[MHz]
[pF]
Type No.
Package
10
1
2610
10
1
5100
VS002E4 ECSP1608-4
t rr max
[ns]
55
The electric capacity changes
Sound
diaphragm
Back plate
G
V CC
S
D
V OUT
Electric signal output
Absolute maximum ratings/Ta=25˚C
V GDS
I DSS
Package
I D
P D
[mA]
V GDO
[mA]
[mW]
[V]
min
20
1
30
0.14
USFP
20
1
30
0.14
20
1
100
0.14
TSSFP
20
1
100
0.14
20
1
100
0.14
VTFP
20
1
100
0.14
20
1
100
0.14
Absolute maximum ratings/Ta=25˚C
Package
V IN
V DD
P D
(unit: mm)
[V]
[V]
[mW]
min
ECSP1410 (1.4×1.0×0.4)
±0.5
4
100
2
±0.5
4
100
2
Vbus
Shorted for use
D–
D+
Controller
Noise clamping of USB eye patterns
C T [pF]
V R [V]
V F [V]
I L [μA]
f=1MHz/
I F =1mA
V R =2.5V
V R =0V
I R =1μA
I R =1mA
typ
min
max
3.4
4.0
0.35
1
16
11
Mobile phone
Hands-free
Digital camera
Digital video camera
Portable games
other
Electrical characteristics/Ta=25˚C
|yfs|
Ciss
Crss
G V
V NO
typ(*min)
typ
typ
typ
max
[mS]
[pF]
[pF]
[dB]
[dB]
max
0.35
1.0
3.5
0.65
-3.0
-110
0.35
1.4
3.1
0.95
1.0
-102
0.35
1.0
3.5
0.65
-3.0
-110
0.35
1.4
5.0
1.1
-2.0
-102
0.35
1.0
3.5
0.65
-3.0
-110
0.35
1.4
5.0
1.1
-2.0
-102
0.35
1.4
3.1
0.95
1.0
-102
Electrical characteristics/Ta=25˚C
Ci
V DD [V]
I DD [μA]
G V
V NO
typ
[dB]
[dB]
[pF]
max
min
max
3.6
2.7
140
100
12
-90
3.6
2.7
140
200
12
-90
USB
Abnormal signals of 4.0V or more
eliminated (overshoot eliminated)
+D
–D
Abnormal signals of 0.35V or more
eliminated (undershoot eliminated)
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