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Devices for Mobile Equipment
■ DC-DC Converter/Load SW
(1) DC-DC Converter
Recommended MOSFETs
Back Converter
(Step Down)
Synchronous Back Converter
(Pch + Nch or Nch + Nch)
MCPH3/5
Boost Converter
(Step Up)
R DS (on)
V DSS
max [mΩ]
Drive
Package
Type No.
[V]
V GS =4V
[V]
(*: V GS =4.5V)
SCH2809
290*
1.8
-12
SCH6
SCH2810
530
2.5
SCH2811
-30
830
4.0
MCH5815
290*
1.8
-12
MCH5818
530
MCPH5
MCH5802
-30
1090
4.0
MCH5805
-60
2300
CPH5812
290*
1.8
CPH5815
-12
290*
CPH5818
490*
4.0
CPH5
CPH5802
145
1.8
-20
CPH5835
235
2.5
CPH5822
-30
290
4.0
VEC2811
-30
168
4.0
VEC8
VEC2817
-12
62*
2.5
R DS (on)
V DSS
max [mΩ]
Drive
Package
Type No.
[V]
V GS =4V
[V]
(*: V GS =4.5V)
SCH1305
-12
310*
SCH1406
1.8
SCH6
210
SCH2806
20
SCH2816
440
4.0
MCH3317
-12
290*
MCH3456
15
160
1.8
MCH5811
20
210
MCH5819
30
520
4.0
CPH3321
-12
98*
1.8
CPH3313
-20
235
2.5
CPH3337
-30
77
4.0
CPH3/5
CPH5809
30
90
2.5
CPH5819
30
520
4.0
CPH5805
30
150
R DS (on)
V DSS
Drive
Package
Type No.
max [mΩ]
[V]
[V]
V GS =4V
SCH2817
15
160
1.8
SCH2806
20
210
SCH6
SCH2819
215
2.5
30
SCH2808
560
4.0
MCH5826
15
160
1.8
MCH5811
20
210
MCPH5
MCH5809
215
2.5
30
MCh5819
520
4.0
CPH5803
210
CPH5811
20
63
1.8
CPH5831
63
CPH5
CPH5809
90
2.5
CPH5819
30
520
4.0
CPH5805
150
VEC2813
20
66
1.8
VEC8
VEC2816
30
99
4.0
6
[Bipolar Transistor Use Example]
V IN
SBD
15V/0.5A
15V/0.5A
30V/0.5A
Bipolar Transistors + Schottky Barrier Diodes
50V/0.1A
15V/2A
Absolute maximum ratings/Ta=25˚C
15V/0.5A
Type No.
Package
V CEO
[V]
15V/1A
30V/0.5A
CPH5706
30
30V/2A
15V/3A
CPH5705
30
CPH5
SBD
CPH5702
30
CPH5703
50
-
Bipolar Transistors (PNP)
15V/0.5A
-
Type No.
Package
15V/1A
30V/0.5A
MCH3144
MCH3109
-
MCPH3
MCH3145
MCH3105
*1: When mounted on ceramic substrate (600mm
30V/0.5A
Bipolar Transistors (NPN)
SBD
Type No.
Package
15V/0.5A
MCH3244
MCH3221 *
2
30V/0.5A
MCPH3
MCH3245
15V/0.5A
MCH3222 *
2
15V/1A
*1: When mounted on ceramic substrate (600mm
30V/0.5A
15V/1A
B18
15V/2A
Co
Ca
30V/0.5A
30V/2A
B
E
A
Step up chopper
Step down chopper
V OUT
V IN
Electrical characteristics/Ta=25˚C
TR
SBD
TR
h FE
V CE (sat) [V]
I C
P C
V RRM
I O
V CE
I C
I C
I B
[A]
[W]
[V]
[A]
min max
typ
max
[V]
[A]
[A]
[mA]
1.5 0.9
30
0.7
2
0.1 200 560 0.75 15 0.25 0.375 0.7 0.55 10 200 0.1 10
3
0.9
15
1
2
0.5 200 560 1.5
30 0.155 0.23 0.5 0.35 6 500 0.1 15
3
0.9
30
0.7
2
0.5 200 560 1.5
30 0.12
0.18 0.7 0.55 15 80 0.1 10
3
0.9
50
0.5
2
0.1 200 560
1
50 0.08
0.12 0.5 0.55 25 50 0.1 10
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
h FE
V CEO
I C
P C
I C
[V]
[A]
[W]
min
max
[A]
30
2
0.8 *
1
200
560
1.5
30
3
0.8 *
1
200
560
1.5
50
2
0.8 *
1
200
560
1
50
3
0.8 *
1
200
560
1
2
×0.8mm)
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
h FE
V CEO
I C
P C
I C
[V]
[A]
[W]
min
max
[A]
30
2
0.8 *
1
200
560
1.5
30
3
0.8 *
1
250
400
1.5
50
2
0.8 *
1
200
560
1
50
3
0.8 *
1
250
400
1
2
×0.8mm)
*2: MBIT III series (New Product)
B22
Co
Ca
B
E
A
7
V OUT
Internal
SBD
chip
Electrical
V F [V]
I R [μA]
t rr [ns]
equivalent
connection
I F
V R
I F
product
max
max
max
[A]
[V]
[A]
CPH3115
B18
+SBS006
CPH3109
B18
+SBS004
CPH3209
B22
+SB07-03C
CPH3205
B22
+SB05-05CP
V CE (sat) [V]
Complementary
product
I B
typ
max
[mA]
75
0.17
0.26
MCH3244
30
0.155
0.23
MCH3209
50
0.165
0.33
MCH3245
50
0.1
0.2
MCH3205
V CE (sat) [V]
Complementary
product
I B
typ
max
[mA]
75
0.16
0.24
MCH3144
30
0.08
0.12
-
50
0.13
0.26
MCH3145
50
0.06
0.09
-
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