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Philips Semiconductors
TOPFET high side switch
SMD version of BUK209-50Y
STATIC CHARACTERISTICS
Limits are at -40˚C ≤ T
mb
SYMBOL PARAMETER
Clamping voltages
V
Battery to ground
BG
V
Battery to load
BL
-V
Negative load to ground
LG
-V
Negative load voltage
LG
Supply voltage
V
Operating range
BG
Currents
I
Quiescent current
B
I
Off-state load current
L
I
Operating current
G
I
Nominal load current
L
Resistances
R
On-state resistance
ON
R
On-state resistance
ON
R
Internal ground resistance
G
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP.
7 The supply and input voltage for the R
September 2002
≤ 150˚C and typicals at T
CONDITIONS
I
= 1 mA
G
I
= I
L
I
= 10 mA
L
1
I
= 5 A; t
L
battery to ground
2
9 V ≤ V
3
V
LG
4
V
BL
5
I
= 0 A
L
6
V
BL
9 to 35 V
I
= 10 mA
G
tests are continuous. The specified pulse duration t
ON
= 25 ˚C unless otherwise stated.
mb
= 1 mA
G
= 300 µs
p
≤ 16 V
BG
= 0 V
T
= 25˚C
mb
= V
BG
T
= 25˚C
mb
= 0.5 V
T
= 85˚C
mb
7
V
I
t
BG
L
p
300 µs
5 A
300 µs
6 V
5 A
3
Product specification
BUK214-50Y
MIN.
TYP.
50
55
50
55
18
23
20
25
5.5
-
-
-
-
0.1
-
-
-
0.1
-
2
6
-
T
mb
25˚C
-
45
150˚C
-
-
25˚C
-
55
150˚C
-
-
95
150
refers only to the applied load current.
p
MAX.
UNIT
65
V
65
V
28
V
30
V
35
V
µA
20
µA
2
µA
20
µA
1
4
mA
-
A
60
mΩ
120
mΩ
75
mΩ
150
mΩ
Ω
190
Rev 2.000
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