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Philips Semiconductors
Magnetoresistive sensors for
magnetic field measurement
handbook, halfpage
Fig.3
The resistance of the permalloy as a
function of the external field.
handbook, full pagewidth
2000 Sep 06
R
H
MLC128
Fig.4 KMZ10 chip structure.
In this basic form, the MR effect can be used effectively for
angular measurement and some rotational speed
measurements, which do not require linearization of the
sensor characteristic.
In the KMZ series of sensors, four permalloy strips are
arranged in a meander fashion on the silicon (Fig.4 shows
one example, of the pattern on a KMZ10). They are
connected in a Wheatstone bridge configuration, which
has a number of advantages:
Reduction of temperature drift
Doubling of the signal output
The sensor can be aligned at the factory.
4
General
MBC930
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