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Philips Semiconductors
Wide dynamic range AGC transimpedance amplifier(150MHz)
DC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at T
SYMBOL
SYMBOL
PARAMETER
PARAMETER
V
Input bias voltage
IN
V
Output bias voltage
O
V
Output offset voltage (V
OS
I
Supply current
CC
I
Output sink/source current
OMAX
NOTE: Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product.
AC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at T
SYMBOL
SYMBOL
PARAMETER
PARAMETER
R
Transresistance (differential output)
T
Transresistance
R
T
(single-ended output)
Output resistance
R
O
(differential output)
Output resistance
R
O
(single-ended output)
f
Bandwidth (-3dB)
3dB
R
Input resistance
IN
1
C
Input capacitance
IN
Input capacitance including Miller multiplied
C
INT
capacitance
R/ V
Transresistance power supply sensitivity
Transresistance ambient temperature sensi-
R/ T
tivity
RMS noise current spectral density (referred
I
IN
2
to input)
Integrated RMS noise current over the band-
width (referred to input)
idth (referred to inp t)
C
C
= 0.1 F
= 0.1pF
S
S
I
T
T
C
= 0.4pF
S
PSRR
Power supply rejection ratio (change in V
PSRR
Power supply rejection ratio
V
Maximum differential output AC voltage
OLMAX
dR
T
AGC loop time constant parameter
dt
Maximum input amplitude for output duty
I
INMAX
cycle of 50 5%
t
, t
Output rise and fall times
r
f
t
Group delay
D
NOTES:
1. Does not include Miller-multiplied capacitance of input device.
2. Noise performance measured differential. Single-ended output noise is higher due to CM noise.
3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in V
4. This implies that the SA5223 gain will change 1dB (10%) in the absence of data for 1ms (i.e., can handle bursty data without degrading Bit
Error Rate (BER) for 100,000 cycles at 100MHz).
1995 Oct 24
= 25 C, and V
= +5V, unless otherwise specified.
A
CC
- V
)
PIN6
PIN7
= 25 C and V
= +5V, unless otherwise specified.
A
CC
TEST CONDITIONS
TEST CONDITIONS
DC tested, R
DC tested, R
V
CC1
Test Circuit 2, f = 10MHz
)
DC Tested, V
OS
3
f = 1.0MHz, Test Circuit 3
I
4
TEST CONDITIONS
TEST CONDITIONS
=
, I
= 0-1 A
L
IN
=
, I
= 0-1 A
L
IN
DC tested
DC tested
Test Circuit 1
DC tested
= V
= 5 0.5V
CC2
T
= T
- T
A
A MAX
A MIN
Test circuit 2,
f = 50MHz
f = 100MHz
f = 150MHz
f = 50MHz
f = 100MHz
f = 150MHz
= 0.5V
CC
= 0–2mA peak AC
i
10 A to 20 A steps
Test circuit 4
10 – 90%
f = 10MHz
3
Product specification
SA5223
SA5223
UNIT
UNIT
Min
Typ
Max
1.3
1.55
1.8
2.9
3.2
3.5
-200
80
+200
mV
15
22
29
mA
1.5
2
mA
SA5223
UNIT
UNIT
Min
Typ
Max
90
125
160
k
45
62.5
80
k
140
70
110
150
MHz
250
0.7
pF
4.0
pF
3
%/V
o
0.09
%/
C
1.17
pA
7
12
16
nA
8
13
18
–55
dB
–20
dB
800
mV
1
dB/ms
+2
mA
2.2
ns
2.2
ns
line.
CC
V
V
Hz
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