LG MCD23 Service Manual page 49

A0-A10
CS# Input
RAS# Input
CAS#
WE# Input
LDQM,
UDQM
DQ0-DQ15 Input/Output Data I/O: The DQ0-15 input and output data are synchronized with the positive
NC -
V Supply
DDQ
V Supply
SSQ
V Supply
DD
V Supply
SS
LGE Internal Use Only
Input Address Inputs: A0-A10 are sampled during the BankActivate command (row
address A0-A10) and Read/Write command (column address A0-A7 with A10
defining Auto Precharge) to select one location out of the 256K available in the
respective bank. During a Precharge command, A10 is sampled to determine if
both banks are to be precharged (A10 = HIGH). The address inputs also provide
the op-code during a Mode Register Set command.
Chip Select: CS# enables (sampled LOW) and disables (sampled HIGH) the
command decoder. All commands are masked when CS# is sampled HIGH.
CS# provides for external bank selection on systems with multiple banks. It is
considered part of the command code.
Row Address Strobe: The RAS# signal defines the operation commands in
conjunction with the CAS# and WE# signals and is latched at the positive edges
of CLK. When RAS# and CS# are asserted "LOW" and CAS# is asserted
"HIGH," either the BankActivate command or the Precharge command is
selected by the WE# signal. When the WE# is asserted "HIGH," the
BankActivate command is selected and the bank designated by BS is turned on
to the active state. When the WE# is asserted "LOW," the Precharge command
is selected and the bank designated by BS is switched to the idle state after the
precharge operation.
Input Column Address Strobe: The CAS# signal defines the operation commands in
conjunction with the RAS# and WE# signals and is latched at the positive edges
of CLK. When RAS# is held "HIGH" and CS# is asserted "LOW," the column
access is started by asserting CAS# "LOW." Then, the Read or Write command
is selected by asserting WE# "LOW" or "HIGH."
Write Enable: The WE# signal defines the operation commands in conjunction
with the RAS# and CAS# signals and is latched at the positive edges of CLK.
The WE# input is used to select the BankActivate or Precharge command and
Read or Write command.
Input Data Input/Output Mask: LDQM and UDQM are byte specific, nonpersistent
I/O buffer controls. The I/O buffers are placed in a high-z state when
LDQM/UDQM is sampled HIGH. Input data is masked when LDQM/UDQM is
sampled HIGH during a write cycle. Output data is masked (two-clock latency)
when LDQM/UDQM is sampled HIGH during a read cycle. UDQM masks DQ15-
DQ8, and LDQM masks DQ7-DQ0.
edges of CLK. The I/Os are byte-maskable during Reads and Writes.
No Connect: These pins should be left unconnected.
DQ Power: Provide isolated power to DQs for improved noise immunity.
( 3.3V 0.3V )
DQ Ground: Provide isolated ground to DQs for improved noise immunity.
( 0 V )
Power Supply: +3.3V
Ground
0.3V
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Only for training and service purposes