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Panasonic Transistors 2SB1218A Specification Sheet page 3

Transistors silicon pnp epitaxial planar type

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This product complies with the RoHS Directive (EU 2002/95/EC).
NF  I
E
6
V
CB
f = 1 kHz
= 2 kΩ
R
5
g
= 25°C
T
a
4
3
2
1
0
0.01
0.1
1
( mA )
Emitter current I
E
h Parameter  V
CE
h
fe
100
h
(µS)
oe
10
−4
h
(× 10
)
re
= 2 mA
h
(kΩ)
I
ie
E
f = 270 Hz
= 25°C
T
a
1
−1
−10
Collector-emitter voltage V
20
= −5 V
V
= −5 V
CB
= 50 kΩ
R
g
= 25°C
T
a
16
12
8
4
0
10
0.1
Emitter current I
−100
( V )
CE
SJC00071BED
NF  I
E
f = 100 Hz
1 kHz
10 kHz
1
10
( mA )
E
2SB1218A
h Parameter  I
E
V
CE
f = 270 Hz
= 25°C
T
a
h
fe
100
h
(µS)
oe
10
h
(kΩ)
ie
−4
h
(× 10
)
re
1
0.1
1
( mA )
Emitter current I
E
= −5 V
10
3

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