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Panasonic Transistors 2SB1218A Specification Sheet page 2

Transistors silicon pnp epitaxial planar type

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2SB1218A
 T
P
C
a
200
160
120
80
40
0
0
40
80
Ambient temperature T
 V
I
B
BE
−400
−350
−300
−250
−200
−150
−100
−50
0
− 0.4
− 0.8
−1.2
0
Base-emitter voltage V
 I
h
FE
C
600
500
400
= 75°C
T
a
300
25°C
−25°C
200
100
0
−1
−10
−100
Collector current I
C
2
This product complies with the RoHS Directive (EU 2002/95/EC).
−120
−100
−80
−60
−40
−20
0
−2
0
120
160
( °C )
Collector-emitter voltage V
a
−240
= −5 V
V
CE
= 25°C
T
a
−200
−160
−120
−80
−40
0
−1.6
0
Base-emitter voltage V
( V )
BE
160
= −10 V
= −10 V
V
V
CB
CE
= 25°C
T
a
140
120
100
80
60
40
20
0
−1 000
0.1
( mA )
 V
I
C
CE
= 25°C
T
a
= −300 µA
I
B
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
−4
−6
−8
−10
−12
( V )
CE
 V
I
C
BE
= −5 V
V
CE
25°C
= 75°C
−25°C
T
a
− 0.4
− 0.8
−1.2
−1.6
−2.0
( V )
BE
 I
f
T
E
1
10
100
( mA )
Emitter current I
E
SJC00071BED
 I
I
C
B
−60
= −5 V
V
CE
= 25°C
T
a
−50
−40
−30
−20
−10
0
−150
−300
0
( µA )
Base current I
B
 I
V
CE(sat)
C
−10
I
C
−1
= 75°C
T
a
25°C
− 0.1
−25°C
− 0.01
− 0.001
−1
−10
−100
( mA )
Collector current I
C
 V
C
ob
CB
8
I
E
f = 1 MHz
7
T
6
5
4
3
2
1
0
−1
−10
Collector-base voltage V
−450
= 10
/ I
B
−1 000
= 0
= 25°C
a
−100
( V )
CB

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