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Panasonic Transistors 2SB1218A Specification Sheet

Transistors silicon pnp epitaxial planar type

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Transistors
2SB1218A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1819A
■ Features
• High forward current transfer ratio h
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol
Rating
−45
V
CBO
−45
V
CEO
−7
V
EBO
−100
I
C
−200
I
CP
P
150
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= −10 µA, I
V
I
CBO
C
= −2 mA, I
V
I
CEO
C
= −10 µA, I
V
I
EBO
E
I
V
CBO
CB
I
V
CEO
CE
*
h
V
FE
CE
= −100 mA, I
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
Q
R
160 to 260
210 to 340
BQ
BR
Unit
V
V
V
mA
mA
Marking Symbol: B
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= −20 V, I
= 0
E
= −10 V, I
= 0
B
= −10 V, I
= −2 mA
C
= −10 mA
B
= −10 V, I
= 1 mA, f = 200 MHz
E
= −10 V, I
= 0, f = 1 MHz
E
S
No-rank
290 to 460
160 to 460
BS
B
SJC00071BED
+0.1
0.3
–0.0
3
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
10°
SMini3-G1 Package
Min
Typ
Max
−45
−45
−7
− 0.1
−100
160
460
− 0.3
− 0.5
80
2.7
Unit: mm
+0.10
0.15
–0.05
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
Unit
V
V
V
µA
µA
V
MHz
pF
1

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Summary of Contents for Panasonic Transistors 2SB1218A

  • Page 1 Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A ■ Features • High forward current transfer ratio h • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
  • Page 2 2SB1218A  T ( °C ) Ambient temperature T  V −400 = −5 V = 25°C −350 −300 −250 −200 −150 −100 −50 − 0.4 − 0.8 −1.2 −1.6 ( V ) Base-emitter voltage V  I = −10 V = 75°C 25°C −25°C...
  • Page 3 NF  I = −5 V f = 1 kHz = 2 kΩ = 25°C 0.01 ( mA ) Emitter current I h Parameter  V (µS) −4 (× 10 = 2 mA (kΩ) f = 270 Hz = 25°C −1 −10 −100...
  • Page 4 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.