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Panasonic Transistors 2SD1819G Specifications page 2

Transistors silicon npn epitaxial planar type

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2SD1819G
 T
P
C
a
200
160
120
80
40
0
0
40
80
Ambient temperature T
 V
I
C
BE
200
160
120
25°C
= 75°C
−25°C
T
a
80
40
0
0
0.4
0.8
1.2
Base-emitter voltage V
 I
h
FE
C
600
500
= 75°C
400
T
a
25°C
300
−25°C
200
100
0
0.1
1
10
Collector current I
C
2
This product complies with the RoHS Directive (EU 2002/95/EC).
60
50
40
30
20
10
0
0
120
160
( °C )
Collector-emitter voltage V
a
240
= 10 V
V
V
CE
CE
= 25°C
T
a
200
160
120
80
40
0
1.6
2.0
0
( V )
BE
300
= 10 V
V
CE
240
180
120
60
0
− 0.1
100
( mA )
 V
I
C
CE
= 25°C
T
a
= 160 µA
I
B
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
20 µA
2
4
6
8
10
( V )
CE
 I
I
C
B
= 10 V
200
400
600
800
1 000
( µA )
Base current I
B
 I
f
T
E
= 10 V
V
CB
= 25°C
T
a
−1
−10
−100
( mA )
Emitter current I
E
SJC00372AED
 V
I
B
BE
1 200
V
T
1 000
800
600
400
200
0
0
0.2
0.4
0.6
Base-emitter voltage V
BE
 I
V
CE(sat)
C
100
I
C
10
1
25°C
= 75°C
T
0.1
a
−25°C
0.01
0.1
1
10
( mA )
Collector current I
C
= 10 V
CE
= 25°C
a
0.8
1.0
( V )
= 10
/ I
B
100

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