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Panasonic Transistors 2SC3931 Specification Sheet page 3

Transistors silicon npn epitaxial planar type

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This product complies with the RoHS Directive (EU 2002/95/EC).
 V
C
ob
CB
1.2
= 0
I
E
f = 1 MHz
= 25°C
T
a
1.0
0.8
0.6
0.4
0.2
0
0
5
10
15
20
Collector-base voltage V
CB
 g
b
ie
ie
20
= g
+ jb
y
ie
ie
ie
150
= 10 V
−4 mA
V
CE
100
16
−7 mA
−2 mA
100
12
58
8
58
25
4
25
f = 10.7 MHz
0
0
3
6
9
12
( mS )
Input conductance g
ie
 g
b
oe
oe
1.2
−2 mA
1.0
−4 mA
100
0.8
−7 mA
0.6
58
0.4
25
0.2
= g
y
f = 10.7 MHz
oe
= 10 V
V
CE
0
0
0.1
0.2
0.3
0.4
( mS )
Output conductance g
oe
40
30
20
10
0
− 0.1
25
30
( V )
Emitter current I
0
= g
+ jb
y
re
re
= 10 V
V
CE
−1
−2
−3
−4
−5
−6
− 0.5
− 0.4
15
Reverse transfer conductance g
150
+ jb
oe
oe
0.5
SJC00142BED
 I
G
P
E
f = 100 MHz
= 50 Ω
R
g
= 25°C
T
a
= 10 V
V
CE
6 V
−1
−10
−100
( mA )
E
 g
b
re
re
10.7
25
re
−4 mA
−1 mA
58
= −7 mA
I
E
100
f = 150 MHz
− 0.3
− 0.2
− 0.1
0
( mS )
re
2SC3931
NF  I
E
12
f = 100 MHz
R
g
= 25°C
T
a
10
8
6
= 6 V, 10 V
V
4
CE
2
0
− 0.1
−1
−10
( mA )
Emitter current I
E
 g
b
fe
fe
0
10.7
−1 mA
58
100
−20
150
−2 mA
−40
−4 mA
150
100
−60
f = 150 MHz
= −7 mA 100
I
E
−80
−100
= g
y
fe
= 10 V
V
CE
−120
0
20
40
60
Forward transfer conductance g
= 50 kΩ
−100
58
+ jb
fe
fe
80
100
( mS )
fe
3

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