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Panasonic Transistors 2SC3931 Specification Sheet page 2

Transistors silicon npn epitaxial planar type

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2SC3931
 T
P
C
a
200
160
120
80
40
0
0
40
80
Ambient temperature T
 V
I
C
BE
30
25°C
25
= 75°C
−25°C
T
a
20
15
10
5
0
0
0.4
0.8
1.2
Base-emitter voltage V
 I
f
T
E
1 200
1 000
800
600
400
200
0
− 0.1
−1
−10
Emitter current I
E
2
This product complies with the RoHS Directive (EU 2002/95/EC).
12
10
8
6
4
2
0
0
120
160
( °C )
Collector-emitter voltage V
a
100
= 6 V
V
CE
10
1
0.1
0.01
0.1
1.6
2.0
( V )
Collector current I
BE
120
= 6 V
V
CB
= 25°C
T
a
100
80
60
40
20
0
−100
− 0.1
( mA )
Emitter current I
 V
I
C
CE
= 25°C
T
a
= 100 µA
I
B
80 µA
60 µA
40 µA
20 µA
6
12
18
( V )
CE
 I
V
CE(sat)
C
= 10
I
/ I
C
B
= 75°C
T
25°C
a
−25°C
1
10
100
( mA )
C
 I
Z
rb
E
= 6 V
V
CB
f = 2 MHz
= 25°C
T
a
−1
−10
( mA )
E
SJC00142BED
 I
I
C
B
12
V
CE
= 25°C
T
a
10
8
6
4
2
0
0
60
120
( µA )
Base current I
B
 I
h
FE
C
360
V
CE
300
240
= 75°C
T
a
180
25°C
−25°C
120
60
0
0.1
1
10
( mA )
Collector current I
C
 V
C
re
CE
2.4
= 1 mA
I
C
f = 10.7 MHz
= 25°C
T
a
2.0
1.6
1.2
0.8
0.4
0
0.1
1
10
Collector-emitter voltage V
= 6 V
180
= 6 V
100
100
( V )
CE

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