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Panasonic Transistors 2SC3930G Specifications page 3

Transistors silicon npn epitaxial planar type

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This product complies with the RoHS Directive (EU 2002/95/EC).
 V
C
re
CE
3.0
f = 10.7 MHz
= 25°C
T
a
2.5
2.0
= 3 mA
I
C
1 mA
1.5
1.0
0.5
0
0.1
1
10
Collector-emitter voltage V
 g
b
ie
ie
24
= g
V
ie
ie
= 10 V
V
CE
20
−7 mA
−4 mA
100
−2 mA
16
58
12
8
4
f = 10.7 MHz
0
0
8
16
24
32
( mS )
Input conductance g
ie
 g
b
oe
oe
1.2
= g
y
oe
oe
= 10 V
V
CE
1.0
= −1 mA
I
0.8
E
100
0.6
58
0.4
0.2
f = 10.7 MHz
0
0
0.1
0.2
0.3
0.4
( mS )
Output conductance g
oe
24
20
16
12
8
4
0
− 0.1
100
( V )
Emitter current I
CE
0
= g
+ jb
y
+ jb
re
re
ie
= 10 V
V
CE
− 0.1
− 0.2
− 0.3
− 0.4
− 0.5
− 0.6
− 0.5
− 0.4
40
Reverse transfer conductance g
+ jb
oe
0.5
SJC00357AED
 I
G
P
E
= 10 V
V
CE
f = 100 MHz
= 25°C
T
a
−1
−10
−100
( mA )
E
 g
b
re
re
f = 10.7 MHz
re
= −1 mA
I
E
58
100
− 0.3
− 0.2
− 0.1
0
( mS )
re
2SC3930G
NF  I
E
12
V
CB
f = 100 MHz
= 50 Ω
R
g
10
= 25°C
T
a
8
6
4
2
0
− 0.1
−1
( mA )
Emitter current I
E
 g
b
fe
fe
0
f = 10.7 MHz
− 0.1 mA
10.7
58
−1 mA
100
−20
58
−2 mA
100
−40
= −4 mA
I
E
−60
58
100
−80
−100
= g
y
fe
= 10 V
V
CE
−120
0
20
40
60
Forward transfer conductance g
= 6 V
−10
+ jb
fe
fe
80
100
( mS )
fe
3

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