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Panasonic Transistors 2SC3930G Specifications page 2

Transistors silicon npn epitaxial planar type

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2SC3930G
 T
P
C
a
200
160
120
80
40
0
0
40
80
Ambient temperature T
 V
I
B
BE
120
100
80
60
40
20
0
0
0.2
0.4
0.6
Base-emitter voltage V
 I
h
FE
C
240
200
= 75°C
T
160
a
25°C
120
−25°C
80
40
0
0.1
1
10
Collector current I
C
2
This product complies with the RoHS Directive (EU 2002/95/EC).
12
10
8
6
4
2
0
0
120
160
( °C )
Collector-emitter voltage V
a
60
= 10 V
V
CE
= 25°C
T
a
50
40
T
30
20
10
0
0.8
1.0
0
( V )
Base-emitter voltage V
BE
400
= 10 V
V
CE
300
200
100
0
− 0.1
100
( mA )
 V
I
C
CE
= 25°C
T
a
= 100 µA
I
B
80 µA
60 µA
40 µA
20 µA
6
12
18
( V )
CE
 V
I
C
BE
= 10 V
V
CE
25°C
= 75°C
−25°C
a
0.4
0.8
1.2
1.6
2.0
( V )
BE
 I
f
T
E
= 10 V
V
CB
f = 100 MHz
= 25°C
T
a
−1
−10
−100
( mA )
Emitter current I
E
SJC00357AED
 I
I
C
B
15.0
V
CE
T
a
12.5
10.0
7.5
5.0
2.5
0
0
20
40
60
80
( µA )
Base current I
B
 I
V
CE(sat)
C
100
I
/ I
C
10
1
= 75°C
T
a
25°C
0.1
−25°C
0.01
0.1
1
10
( mA )
Collector current I
C
 I
Z
rb
E
60
V
CB
f = 2 MHz
= 25°C
T
a
50
40
30
20
10
0
− 0.1
−1
( mA )
Emitter current I
E
= 10 V
= 25°C
100
= 10
B
100
= 10 V
−10

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