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Panasonic Transistors 2SC1318 Specifications page 2

Transistors silicon npn epitaxial planar type

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2SC1318
2SC1318_PC-Ta
P
 T
C
800
600
400
200
0
0
40
80
Ambient temperature T
2SC1318_VCE(sat)-IC
V
 I
CE(sat)
100
10
1
T
= 75°C
a
25°C
0.1
0.01
0.01
0.1
Collector current I
2SC1318_fT-IE
f
 I
T
240
200
160
120
80
40
0
−1
−10
Emitter current I
2
This product complies with the RoHS Directive (EU 2002/95/EC).
a
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
120
160
0
Collector-emitter voltage V
(°C)
a
C
100
I
/ I
= 10
C
B
10
1
−25°C
0.1
0.01
1
10
0.01
(A)
C
E
12
V
= 10 V
CB
T
= 25°C
a
10
8
6
4
2
0
−100
1
(mA)
Collector-base voltage V
E
2SC1318_IC-VCE
I
 V
C
CE
T
= 25°C
a
I
= 10 mA
B
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
4
8
12
16
20
(V)
CE
2SC1318_VBE(sat)-IC
V
 I
BE(sat)
C
I
/ I
= 10
C
B
25°C
T
= 75°C
a
−25°C
0.1
1
10
Collector current I
(A)
C
2SC1318_Cob-VCB
C
 V
ob
CB
I
= 0
E
f = 1 MHz
T
= 25°C
a
10
100
(V)
CB
SJC00420AED
2SC1318_IC-IB
I
 I
C
B
0.8
V
CE
T
= 25°C
a
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8
Base current I
(mA)
B
2SC1318_hFE-IC
h
 I
FE
C
300
V
= 10 V
CE
250
T
= 75°C
a
200
25°C
−25°C
150
100
50
0
0.01
0.1
1
Collector current I
(A)
C
2SC1318_VCER-RBE
V
 R
CER
BE
120
I
= 2 mA
C
T
= 25°C
a
100
80
60
40
20
0
1
10
100
Base-emitter resistance R
BE
= 10 V
10
10
1000
(kΩ)

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