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Panasonic Transistors 2SB1722G Specifications page 2

Transistors silicon pnp epitaxial planar type

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2SB1722G
 T
P
C
a
150
125
100
75
50
25
0
0
25
50
75
100
Ambient temperature T
 I
V
CE(sat)
−1
= 10
I
/I
C
B
= 85°C
T
a
− 0.1
25°C
− 0.01
− 0.01
− 0.1
−1
Collector current I
C
2
This product complies with the RoHS Directive (EU 2002/95/EC).
−35
= 25°C
T
a
−30
−25
−20
−15
−10
−5
0
125
150
0
Collector-emitter voltage V
(°C)
a
C
500
450
400
350
300
−25°C
250
200
150
100
50
0
−10
−100
−1
(mA)
 V
I
C
CE
= −5.0 mA
I
B
−4.5 mA
−4.0 mA
−3.5 mA
−3.0 mA
−2.5 mA
−2.0 mA
−1.5 mA
−1.0 mA
− 0.5 mA
−2
−4
−6
−8
−10
−12
(V)
CE
 I
h
FE
C
= −10 V
V
= 85°C
CE
T
a
25°C
−25°C
−10
−100
Collector current I
(mA)
C
SJC00389AED
 V
I
C
BE
−50
= −10 V
V
CE
−45
−40
−35
= 85°C
T
a
−30
−25
25°C
−20
−15
−10
−5
0
− 0.2
− 0.4
− 0.6
− 0.8
0
Base-emitter voltage V
BE
 V
C
ob
CB
100
f = 1 MHz
= 25°C
T
a
10
1
0.1
−10
−20
−30
0
Collector-base voltage V
CB
−25°C
−1
( V )
−40
(V)

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