Panasonic Transistors 2SB1462J Specifications page 2

2SB1462J
 T
P
C a
150
125
100
75
50
25
0
0 20 40 60 80 100
Ambient temperature T
 V
I
C BE
−120
25°C
−100
−80
= 75°C
T
a
−60
−40
−20
0
− 0.2 − 0.4 − 0.6 − 0.8
0
Base-emitter voltage V
 V
C
ob CB
6
5
4
3
2
1
0
−1 −10
Collector-base voltage V
2
This product complies with the RoHS Directive (EU 2002/95/EC).
−120
−100
−80
−60
−40
−20
0
120 140 160
0
( °C )
a
−10
= −10 V
V
CE
−1
−25°C
− 0.1
− 0.01
− 0.001
−1.0 −1.2 −1
( V )
BE
f = 1 MHz
= 0
I
E
= 25°C
T
a
−100
( V )
CB
 I
I
C B
= −10 V
V
CE
= 25°C
T
a
−60 −120 −180 −240 −300 −360
( µA )
Base current I
B
 I
V
CE(sat) C
= 10
I / I
C B
= 75°C
T
a
25°C
−25°C
−10 −100 −1 000
( mA )
Collector current I
C
SJC00087CED
 V
I
B BE
−1 200
V
T
a
−1 000
−800
−600
−400
−200
0
− 0.2 − 0.4 − 0.6 − 0.8
0
Base-emitter voltage V
 I
h
FE C
360
= 75°C
V
T
a
300
25°C
240
−25°C
180
120
60
0
−1 −10 −100
Collector current I
C
= −10 V
CE
= 25°C
−1.0 −1.2
( V )
BE
= −10 V
CE
−1 000
( mA )