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Panasonic Transistors 2SB0621A Specifications page 2

Transistors silicon pnp epitaxial planar type

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2SB0621A
P
 T
C
1.0
0.8
0.6
0.4
0.2
0
0
40
80
Ambient temperature T
V
 I
CE(sat)
−100
−10
−1
T
= 75°C
a
25°C
− 0.1
−25°C
− 0.01
− 0.01
− 0.1
Collector current I
f
 I
T
200
V
= −10 V
CB
T
= 25°C
a
160
120
80
40
0
1
10
Emitter current I
2
This product complies with the RoHS Directive (EU 2002/95/EC).
a
−1.50
−1.25
−1.00
− 0.75
− 0.50
− 0.25
0
0
120
160
( °C )
Collector-emitter voltage V
a
C
−100
I
/ I
= 10
C
B
−10
−1
− 0.1
− 0.01
−1
−10
− 0.01
( A )
C
E
50
40
30
20
10
0
−1
100
( mA )
Collector-base voltage V
E
I
 V
C
CE
T
= 25°C
a
I
= −10 mA
B
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
−2
−4
−6
−8
−10
( V )
CE
V
 I
BE(sat)
C
I
/ I
= 10
C
B
25°C
T
= −25°C
a
75°C
− 0.1
−1
−10
( A )
Collector current I
C
C
 V
ob
CB
I
= 0
E
f = 1 MHz
T
= 25°C
a
−10
−100
( V )
CB
SJC00416AED
I
 I
C
B
−1.2
V
= −10 V
CE
T
= 25°C
a
−1.0
− 0.8
− 0.6
− 0.4
− 0.2
0
0
−2
−4
−6
−8
−10
( mA )
Base current I
B
h
 I
FE
C
500
V
CE
400
300
T
= 75°C
a
200
25°C
−25°C
100
0
− 0.01
− 0.1
−1
( A )
Collector current I
C
V
 R
CER
BE
−120
I
= −10 mA
C
T
= 25°C
a
−100
−80
−60
−40
−20
0
0.1
1
10
Base-emitter resistance R
BE
−12
= −10 V
−10
100
( kΩ )

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